Datasheet > IS42S16160G

IS42S16160G

更新时间： 2024-01-23 03:34:48

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
63页	942K
描述
32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM

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数据手册

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IS42S16160G 数据手册

ꢀ

IS42S83200G, IS42S16160G

IS45S83200G, IS45S16160G

32Megꢀxꢀ8,ꢀꢀ16Megꢀx16ꢀ

256MbꢀSYNCHRONOUSꢀDRAM

ꢀ

MARCHꢀ2012

OVERVIEW

FEATURES

ISSI'sꢀ256MbꢀSynchronousꢀDRAMꢀꢀachievesꢀhigh-speedꢀ

dataꢀtransferꢀusingꢀpipelineꢀarchitecture.ꢀꢀAllꢀinputsꢀandꢀ

outputsꢀsignalsꢀreferꢀꢀtoꢀtheꢀrisingꢀedgeꢀofꢀtheꢀclockꢀinput.ꢀ

Theꢀ256MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ

•ꢀ Clockꢀfrequency:ꢀ166,ꢀ143ꢀꢀMHz

•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ

positiveꢀclockꢀedge

•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge

•ꢀ SingleꢀPowerꢀsupply:ꢀ3.3Vꢀ+ꢀ0.3Vꢀ

•ꢀ LVTTLꢀinterface

IS42S83200Gꢀ

IS42S16160Gꢀ

8Mꢀxꢀ8ꢀxꢀ4ꢀBanksꢀ 4Mꢀx16x4ꢀBanksꢀ

54-pinꢀTSOPIIꢀ

54-ballꢀBGAꢀ

54-pinꢀTSOPII

54-ballꢀBGAꢀ

•ꢀ Programmableꢀburstꢀlengthꢀꢀ

–ꢀ(1,ꢀ2,ꢀ4,ꢀ8,ꢀfullꢀpage)

ꢀ ꢀ

•ꢀ Programmableꢀburstꢀsequence:ꢀꢀ

Sequential/Interleaveꢀ

KEYꢀTIMINGꢀPARAMETERS

Parameterꢀ

ꢀꢀꢀꢀꢀꢀꢀꢀ-6ꢀ ꢀ

-7ꢀ

ꢀ

Unit

•ꢀ AutoꢀRefreshꢀ(CBR)

•ꢀ SelfꢀRefresh

ClkꢀCycleꢀTimeꢀ

ꢀ CASꢀLatencyꢀ=ꢀ3ꢀ

ꢀ CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

ꢀ

7ꢀ

7.5ꢀ

ꢀ

ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ6ꢀ

ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ10ꢀ

nsꢀ

•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ32ꢀmsꢀ(A2ꢀgrade)ꢀorꢀꢀ

64ꢀmsꢀ(commercial,ꢀindustrial,ꢀA1ꢀgrade)

ClkꢀFrequencyꢀ

ꢀ CASꢀLatencyꢀ=ꢀ3ꢀ

ꢀꢀ CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

ꢀ

ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ166ꢀ

ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ100ꢀ

143ꢀ

133ꢀ

Mhzꢀ

Mhz

•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle

•ꢀ ProgrammableꢀCASꢀlatencyꢀ(2,ꢀ3ꢀclocks)

AccessꢀTimeꢀꢀfromꢀClockꢀ

ꢀ CASꢀLatencyꢀ=ꢀ3ꢀ

ꢀ CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀ

ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ5.4ꢀ

ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ6.5ꢀ

5.4ꢀ

nsꢀ

•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀꢀ

operationsꢀcapability

•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ

command

ADDRESSꢀTABLE

OPTIONS

Parameter

32M x 8

16M x 16

•ꢀ Package:ꢀ

Conﬁguration

8M x 8 x 4

banks

4M x 16 x 4

banks

54-pinꢀTSOP-IIꢀꢀ

54-ballꢀBGA

Refresh Count

Com./Ind. 8K/64ms

A1 8K/64ms

8K/64ms

8K/16ms

•ꢀ OperatingꢀTemperatureꢀRange:ꢀ

Commercialꢀ(0^oCꢀtoꢀ+70^oC)

A2 8K/16ms

Industrialꢀ(-40^oCꢀtoꢀ+85^oC)

Row Addresses

A0-A12

A0-A8

AutomotiveꢀGradeꢀA1ꢀ(-40^oCꢀtoꢀ+85^oC)

AutomotiveꢀGradeꢀA2ꢀ(-40^oCꢀtoꢀ+105^oC)

Column Addresses

Bank Address Pins

Auto Precharge Pins

A0-A9

BA0, BA1

A10/AP

BA0, BA1

A10/AP

outꢀnotice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀ

theꢀlatestꢀversionꢀofꢀthisꢀdeviceꢀspeciﬁcationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.

IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀ

reasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsigniﬁcantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀap-

plicationsꢀunlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:

a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;

b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand

c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstancesꢀ

Integrated Silicon Solution, Inc. — www.issi.comꢀ

Rev.ꢀ A

3/20/2012

12 3 4 5 6 7...63

中文翻译

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与IS42S16160G相关器件

型号	品牌	获取价格	描述	数据表
IS42S16160G-6BL	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16160G-6BLI	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16160G-6BLI-TR	ISSI	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54,
IS42S16160G-6TL	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16160G-6TLI	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16160G-7BI	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16160G-7BL	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16160G-7BLI	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16160G-7TL	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16160G-7TLI	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM

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