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IS42S16320B-6TL PDF预览

IS42S16320B-6TL

更新时间: 2024-09-13 05:39:31
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路光电二极管动态存储器PC时钟
页数 文件大小 规格书
61页 851K
描述
64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

IS42S16320B-6TL 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2, TSOP54,.46,32针数:54
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.28风险等级:5.35
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:793963Samacsys Pin Count:54
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:54 lead tssopSamacsys Released Date:2019-01-25 04:40:52
Is Samacsys:N访问模式:FOUR BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):166 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:R-PDSO-G54
JESD-609代码:e3长度:22.22 mm
内存密度:536870912 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16湿度敏感等级:3
功能数量:1端口数量:1
端子数量:54字数:33554432 words
字数代码:32000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP54,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
刷新周期:8192座面最大高度:1.2 mm
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.004 A子类别:DRAMs
最大压摆率:0.35 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:10
宽度:10.16 mmBase Number Matches:1

IS42S16320B-6TL 数据手册

 浏览型号IS42S16320B-6TL的Datasheet PDF文件第2页浏览型号IS42S16320B-6TL的Datasheet PDF文件第3页浏览型号IS42S16320B-6TL的Datasheet PDF文件第4页浏览型号IS42S16320B-6TL的Datasheet PDF文件第5页浏览型号IS42S16320B-6TL的Datasheet PDF文件第6页浏览型号IS42S16320B-6TL的Datasheet PDF文件第7页 
IS42S86400B  
IS42S16320B, IS45S16320B  
64M x 8, 32M x 16  
512Mb SYNCHRONOUS DRAM  
SEPTEMBER 2009  
OVERVIEW  
FEATURES  
ISSI'sꢀ512MbꢀSynchronousꢀDRAMꢀꢀachievesꢀhigh-speedꢀ  
data transfer using pipeline architecture. All inputs and  
outputs signals refer to the rising edge of the clock input.  
Theꢀ512MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ  
•ꢀ Clockꢀfrequency:ꢀ166,ꢀ143,ꢀ133ꢀꢀMHz  
•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ  
positive clock edge  
•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge  
•ꢀ Powerꢀsupply  
Vd d  
Vd d q  
IS42/45S16320Bꢀ ꢀ3.3Vꢀ 3.3Vꢀ  
IS42S86400Bꢀ  
IS42/45S16320Bꢀ  
ꢀ IS42S86400Bꢀ  
•ꢀ LVTTLꢀinterface  
ꢀ3.3Vꢀ 3.3Vꢀꢀꢀ  
16Mx8x4ꢀBanksꢀ 8Mꢀx16x4ꢀBanksꢀ  
54-pinꢀTSOPIIꢀ  
54-pinꢀTSOPII  
54-ballꢀW-BGAꢀ  
•ꢀ Programmableꢀburstꢀlengthꢀ  
–ꢀ(1,ꢀ2,ꢀ4,ꢀ8,ꢀfullꢀpage)  
•ꢀ Programmableꢀburstꢀsequence:ꢀ  
Sequential/Interleaveꢀ  
•ꢀ AutoꢀRefreshꢀ(CBR)  
•ꢀ SelfꢀRefresh  
KEY TIMING PARAMETERS  
•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ64ꢀms  
•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle  
•ꢀ ProgrammableꢀCASꢀlatencyꢀ(2,ꢀ3ꢀclocks)  
Parameter  
-6  
-7  
-75E Unit  
ClkꢀCycleꢀTimeꢀ  
CASꢀLatencyꢀ=ꢀ3ꢀ  
CASꢀLatencyꢀ=ꢀ2ꢀ  
ꢀꢀ  
6ꢀ  
10ꢀ  
7ꢀ  
10ꢀ  
–ꢀ  
7.5ꢀ  
nsꢀ  
ns  
•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ  
operations capability  
ClkꢀFrequencyꢀ  
ꢀꢀ  
•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ  
CASꢀLatencyꢀ=ꢀ3ꢀ  
CASꢀLatencyꢀ=ꢀ2ꢀ  
166ꢀ  
100ꢀ  
143ꢀ  
100ꢀ  
–ꢀ  
133ꢀ  
Mhzꢀ  
Mhz  
command  
AccessꢀTimeꢀꢀfromꢀClockꢀ  
CASꢀLatencyꢀ=ꢀ3ꢀ  
CASꢀLatencyꢀ=ꢀ2ꢀ  
–ꢀ  
5.5ꢀ  
•ꢀ Availableꢀinꢀ54-pinꢀTSOP-IIꢀandꢀ54-ballꢀW-BGAꢀ  
(x16ꢀonly)  
5.4ꢀ  
6ꢀ  
5.4ꢀ  
6ꢀ  
nsꢀ  
ns  
•ꢀ OperatingꢀTemperatureꢀRange:  
Commercial:ꢀ0oC to +70oC  
Industrial:ꢀ-40oCꢀtoꢀ+85oC  
Automotive,ꢀA1:ꢀ-40oCꢀtoꢀ+85oC  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-  
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain  
the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. C  
08/27/09  

IS42S16320B-6TL 替代型号

型号 品牌 替代类型 描述 数据表
IS42S16320B-7TL ISSI

完全替代

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
IS42S16320B-7TLI ISSI

类似代替

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

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64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
IS42S16320B-6TLI-TR ISSI

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IS42S16320B-6TL-TR ISSI

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DRAM
IS42S16320B-75ETL ISSI

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64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
IS42S16320B-75ETLI ISSI

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64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
IS42S16320B-75ETLI-TR ISSI

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IS42S16320B-75ETL-TR ISSI

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IS42S16320B-7BL ISSI

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64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
IS42S16320B-7BLI ISSI

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64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
IS42S16320B-7BLI-TR ISSI

获取价格

Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, 11 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, WB