Datasheet > IS42S16160J-6BL-TR

IS42S16160J-6BL-TR

更新时间： 2024-11-20 22:58:23

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
63页	792K
描述
IC DRAM 256M PARALLEL 54TFBGA

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IS42S83200J, IS42S16160J

IS45S83200J, IS45S16160J

SEPTEMBER 2020

32Meg x 8, 16Meg x16

256Mb SYNCHRONOUS DRAM

OVERVIEW

FEATURES

ISSI's 256Mb Synchronous DRAM achieves high-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

The 256Mb SDRAM is organized as follows.

• Clock frequency: 166, 143, 133 MHz

• Fully synchronous; all signals referenced to a

positive clock edge

• Internal bank for hiding row access/precharge

• Single Power supply: 3.3V + 0.3V

• LVTTL interface

IS42/45S83200J IS42/45S16160J

8M x 8 x 4 Banks 4M x16x4 Banks

54-pin TSOPII

54-ball BGA

54-pin TSOPII

54-ball BGA

• Programmable burst length

– (1, 2, 4, 8, full page)

• Programmable burst sequence:

Sequential/Interleave

KEY TIMING PARAMETERS

Parameter

-6

-7

Unit

• Auto Refresh (CBR)

• Self Refresh

Clk Cycle Time

CAS Latency = 3

CAS Latency = 2

7.5

• 8K refresh cycles every 32 ms (A2 grade) or

64 ms (commercial, industrial, A1 grade)

Clk Frequency

CAS Latency = 3

CAS Latency = 2

166

100

143

133

Mhz

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

Access Time from Clock

CAS Latency = 3

CAS Latency = 2

5.4

• Burst read/write and burst read/single write

operations capability

• Burst termination by burst stop and precharge

command

ADDRESS TABLE

OPTIONS

Parameter

32M x 8

16M x 16

• Package:

Conﬁguration

8M x 8 x 4

banks

4M x 16 x 4

banks

54-pin TSOP-II

54-ball BGA

Refresh Count

Com./Ind. 8K/64ms

A1 8K/64ms

8K/64ms

8K/32ms

• Operating Temperature Range:

Commercial (0^oC to +70^oC)

A2 8K/32ms

Industrial (-40^oC to +85^oC)

Row Addresses

A0-A12

A0-A8

Automotive Grade A1 (-40^oC to +85^oC)

Automotive Grade A2 (-40^oC to +105^oC)

Column Addresses

Bank Address Pins

Auto Precharge Pins

A0-A9

BA0, BA1

A10/AP

BA0, BA1

A10/AP

out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain

the latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such ap-

plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. C4

09/17/2020

12 3 4 5 6 7...63

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与IS42S16160J-6BL-TR相关器件

型号	品牌	获取价格	描述	数据表
IS42S16160J-6TL	ISSI	获取价格	IC DRAM 256M PARALLEL 54TSOP
IS42S16160J-7BL	ISSI	获取价格	IC DRAM 256M PARALLEL 54TFBGA
IS42S16160J-7TL	ISSI	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, TSOP2-54
IS42S16160J-7TLI	ISSI	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, TSOP2-54
IS42S16160J-7TLI-TR	ISSI	获取价格	IC DRAM 256M PARALLEL 54TSOP
IS42S16320B	ISSI	获取价格	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
IS42S16320B-6BL	ISSI	获取价格	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
IS42S16320B-6BLI	ISSI	获取价格	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
IS42S16320B-6BLI-TR	ISSI	获取价格	DRAM
IS42S16320B-6TL	ISSI	获取价格	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

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