Datasheet > IS42S16160G-6BLI-TR

IS42S16160G-6BLI-TR

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
63页	1150K
描述
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54,

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IS42S83200G, IS42S16160G

IS45S83200G, IS45S16160G

32Meg x 8, 16Meg x16

MARCH 2013

256Mb SYNCHRONOUS DRAM

OVERVIEW

FEATURES

ISSI'sꢀ256MbꢀSynchronousꢀDRAMꢀꢀachievesꢀhigh-speedꢀ

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

Theꢀ256MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ

•ꢀ Clockꢀfrequency:ꢀ200,166,ꢀ143ꢀꢀMHz

•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ

positive clock edge

•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge

•ꢀ SingleꢀPowerꢀsupply:ꢀ3.3Vꢀ+ꢀ0.3Vꢀ

•ꢀ LVTTLꢀinterface

IS42S83200Gꢀ

IS42S16160Gꢀ

8Mꢀxꢀ8ꢀxꢀ4ꢀBanksꢀ 4Mꢀx16x4ꢀBanksꢀ

54-pinꢀTSOPIIꢀ

54-ballꢀBGAꢀ

54-pinꢀTSOPII

54-ballꢀBGAꢀ

•ꢀ Programmableꢀburstꢀlengthꢀ

–ꢀ(1,ꢀ2,ꢀ4,ꢀ8,ꢀfullꢀpage)

ꢀ ꢀ

•ꢀ Programmableꢀburstꢀsequence:ꢀ

KEY TIMING PARAMETERS

Sequential/Interleave

Parameter

-5

-6

-7

Unit

•ꢀ AutoꢀRefreshꢀ(CBR)

•ꢀ SelfꢀRefresh

ClkꢀCycleꢀTimeꢀ ꢀꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ ꢀ

ꢀ

ꢀ5ꢀ

10ꢀ

ꢀ6ꢀ

10ꢀ

ꢀ7ꢀ

7.5ꢀ

nsꢀ

•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ32ꢀmsꢀ(A2ꢀgrade)ꢀorꢀ

64ꢀmsꢀ(commercial,ꢀindustrial,ꢀA1ꢀgrade)

ClkꢀꢀFrequencyꢀ ꢀꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ ꢀ

ꢀ

200ꢀ

100ꢀ

166ꢀ

100ꢀ

143ꢀ

133ꢀ

Mhzꢀ

Mhz

•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle

•ꢀ ProgrammableꢀCAS latency (2, 3 clocks)

AccessꢀTimeꢀꢀfromꢀClockꢀ

ꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ 5ꢀ

5ꢀ

5.4ꢀ

nsꢀ

•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ

operations capability

•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ

command

ADDRESS TABLE

OPTIONS

Parameter

32M x 8

16M x 16

•ꢀ Package:

Conﬁguration

8M x 8 x 4

banks

4M x 16 x 4

banks

54-pinꢀTSOP-IIꢀ

54-ballꢀBGA

Refresh Count

Com./Ind. 8K/64ms

A1 8K/64ms

8K/64ms

8K/32ms

•ꢀ OperatingꢀTemperatureꢀRange:

Commercial (0^oC to +70^oC)

A2 8K/32ms

Industrialꢀ(-40^oCꢀtoꢀ+85^oC)

Row Addresses

A0-A12

A0-A8

AutomotiveꢀGradeꢀA1ꢀ(-40^oCꢀtoꢀ+85^oC)

AutomotiveꢀGradeꢀA2ꢀ(-40^oC to +105^oC)

Column Addresses

Bank Address Pins

Auto Precharge Pins

A0-A9

BA0, BA1

A10/AP

BA0, BA1

A10/AP

out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain

the latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such ap-

plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. E

3/13/2013

12 3 4 5 6 7...63

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与IS42S16160G-6BLI-TR相关器件

型号	品牌	获取价格	描述	数据表
IS42S16160G-6TL	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16160G-6TLI	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16160G-7BI	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16160G-7BL	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16160G-7BLI	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16160G-7TL	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16160G-7TLI	ISSI	获取价格	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16160J	ISSI	获取价格	256Mb SYNCHRONOUS DRAM
IS42S16160J-6BLI	ISSI	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, TFBGA-54
IS42S16160J-6BL-TR	ISSI	获取价格	IC DRAM 256M PARALLEL 54TFBGA

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