是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.79 |
最长访问时间: | 5.4 ns | 最大时钟频率 (fCLK): | 143 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 1,2,4,8 |
JESD-30 代码: | S-PBGA-B54 | 内存密度: | 268435456 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 16 |
端子数量: | 54 | 字数: | 16777216 words |
字数代码: | 16000000 | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 16MX16 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA54,9X9,32 |
封装形状: | SQUARE | 封装形式: | GRID ARRAY, FINE PITCH |
电源: | 3.3 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 连续突发长度: | 1,2,4,8,FP |
最大待机电流: | 0.003 A | 子类别: | DRAMs |
最大压摆率: | 0.16 mA | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS42S16160D-7T | ISSI |
获取价格 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM | |
IS42S16160D-7TI | ISSI |
获取价格 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM | |
IS42S16160D-7TL | ISSI |
获取价格 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM | |
IS42S16160D-7TLI | ISSI |
获取价格 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM | |
IS42S16160D-7TLI-TR | ISSI |
获取价格 |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | |
IS42S16160D-7TL-TR | ISSI |
获取价格 |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54 | |
IS42S16160G | ISSI |
获取价格 |
32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM | |
IS42S16160G-6BL | ISSI |
获取价格 |
32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM | |
IS42S16160G-6BLI | ISSI |
获取价格 |
32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM | |
IS42S16160G-6BLI-TR | ISSI |
获取价格 |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, |