Datasheet > IS42S16160D

IS42S16160D

更新时间： 2024-02-22 11:05:57

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
63页	984K
描述
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM

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中文翻译

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数据手册

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IS42S16160D 数据手册

IS42S83200D, IS42S16160D

IS45S83200D, IS45S16160D

32Meg x 8, 16Meg x16

JUNE 2009

256-MBIT SYNCHRONOUS DRAM

OVERVIEW

FEATURES

ISSI'sꢀ256MbꢀSynchronousꢀDRAMꢀꢀachievesꢀhigh-speedꢀ

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

Theꢀ256MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ

•ꢀ Clockꢀfrequency:ꢀ166,ꢀ143ꢀꢀMHz

•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ

positive clock edge

•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge

•ꢀ SingleꢀPowerꢀsupply:ꢀ3.3Vꢀ+ꢀ0.3Vꢀ

•ꢀ LVTTLꢀinterface

IS42S83200Dꢀ

IS42S16160Dꢀ

8Mꢀxꢀ8ꢀxꢀ4ꢀBanksꢀ 4Mꢀx16x4ꢀBanksꢀ

54-pinꢀTSOPIIꢀ

54-pinꢀTSOPII

•ꢀ Programmableꢀburstꢀlengthꢀ

–ꢀ(1,ꢀ2,ꢀ4,ꢀ8,ꢀfullꢀpage)

ꢀ

54-ballꢀBGAꢀ(contactꢀMarketing)ꢀ

•ꢀ Programmableꢀburstꢀsequence:ꢀ

Sequential/Interleaveꢀ

KEY TIMING PARAMETERS

•ꢀ AutoꢀRefreshꢀ(CBR)

•ꢀ SelfꢀRefresh

Parameter

-6

-7

-75E Unit

ClkꢀCycleꢀTimeꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

6ꢀ

10ꢀ

ꢀ

•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ16ꢀmsꢀ(A2ꢀgrade)ꢀorꢀ

64ꢀmsꢀ(commercial,ꢀindustrial,ꢀA1ꢀgrade)

7ꢀ

10ꢀ

—ꢀ

7.5ꢀ

nsꢀ

ClkꢀFrequencyꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

166ꢀ

100ꢀ

ꢀ

•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle

143ꢀ

100ꢀ

—ꢀ

133ꢀ

Mhzꢀ

Mhz

•ꢀ ProgrammableꢀCASꢀlatencyꢀ(2,ꢀ3ꢀclocks)

•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ

AccessꢀTimeꢀꢀfromꢀClockꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀ

5.4ꢀ

6.5ꢀ

5.4ꢀ

6.5ꢀ

—ꢀ

5.5ꢀ

nsꢀ

operations capability

•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ

command

OPTIONS

•ꢀ Package:

ADDRESS TABLE

Parameter

32M x 8

16M x 16

54-pinꢀTSOP-IIꢀ(x8ꢀandꢀx16)

54-ballꢀBGAꢀ(x16ꢀonly)

Conﬁguration

8M x 8 x 4

banks

4M x 16 x 4

banks

•ꢀ OperatingꢀTemperatureꢀRange:

Commercial (0^oC to +70^oC)

Refresh Count

Com./Ind. 8K/64ms

A1 8K/64ms

8K/64ms

8K/16ms

Industrialꢀ(-40^oCꢀtoꢀ+85^oC)

AutomotiveꢀGradeꢀA1ꢀ(-40^oCꢀtoꢀ+85^oC)

AutomotiveꢀGradeꢀA2ꢀ(-40^oC to +105^oC)

A2 8K/16ms

Row Addresses

A0-A12

A0-A8

Column Addresses

Bank Address Pins

Auto Precharge Pins

A0-A9

•ꢀ DieꢀRevision:ꢀD

BA0, BA1

A10/AP

BA0, BA1

A10/AP

out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain

the latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. B

06/11/09

12 3 4 5 6 7...63

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与IS42S16160D相关器件

型号	品牌	获取价格	描述	数据表
IS42S16160D-6B	ISSI	获取价格	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160D-6BI	ISSI	获取价格	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160D-6BL	ISSI	获取价格	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160D-6BLI	ISSI	获取价格	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160D-6BLI-TR	ISSI	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54
IS42S16160D-6BL-TR	ISSI	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54
IS42S16160D-6B-TR	ISSI	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54
IS42S16160D-6T	ISSI	获取价格	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160D-6TI	ISSI	获取价格	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160D-6TL	ISSI	获取价格	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM

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