Datasheet > IS25WQ080

IS25WQ080

更新时间： 2024-10-15 11:58:59

品牌	Logo	应用领域
美国芯成 - ISSI		闪存
页数	文件大小	规格书
60页	1160K
描述
8 Mbit bit Single Operating Voltage Serial Flash Memory

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中文翻译

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数据手册

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IS25WQ080 数据手册

8 Mbit bit Single Operating Voltage Serial Flash Memory

With 104 MHz Dual- or Quad-Output SPI Bus Interface

IS25WQ080

PRELIMINARY DATASHEET

FEATURES

• Low Power Consumption

• Single Power Supply Operation

- Low voltage range: 1.65 V – 2 V

- Max 15 mA active read current

- Max 20 mA program/erase current

- Max 50uA standby current

• Memory Organization

- IS25WQ080: 1024K x 8 (8 Mbit)

• Hardware Write Protection

- Protect and unprotect the device from write

operation by Write Protect (WP#) Pin

• Cost Effective Sector/Block Architecture

- 8Mb : Uniform 4KByte sectors / Sixteen uniform

64KByte blocks

• Software Write Protection

- The Block Protect (BP3, BP2, BP1, BP0) bits

allow partial or entire memory to be configured as

read-only

• Serial Peripheral Interface (SPI) Compatible

- Supports single-, dual- or quad-output

- Supports SPI Modes 0 and 3

- Maximum 33 MHz clock rate for normal read

- Maximum 104 MHz clock rate for fast read

- Maximum 208MHz clock rate equivalent Dual SPI

- Maximum 416MHz clock rate equivalent Quad SPI

• Byte Program Operation

• High Product Endurance

- Guaranteed 100,000 program/erase cycles per

single sector

- Minimum 20 years data retention

- Typical 8 us/Byte

• Industrial Standard Pin-out and Package

- 8-pin PDIP

- 8-pin 208mil SOIC

- 8-pin 150mil SOIC

- 8-pin 150mil VVSOP

- 8-contact WSON

• Page Program (up to 256 Bytes) Operation

- Maximum 0.7 ms per page program

• Sector, Block or Chip Erase Operation

- Sector Erase (4KB)150 ms (Max)

- Block Erase (32K/64KB)0.5S (Max)

- Chip Erase 6s (8Mb) (Max)

- 16-pin 300mil SOP

- Lead-free (Pb-free) package

•Deep power-down mode 1uA (Typ)

Additional 256-byte Security information one-time

programmable (OTP) area

GENERAL DESCRIPTION

The IS25WQ080 are 8Mbit Serial Peripheral Interface (SPI) Flash memories, providing single-, dual or quad-

output. The devices are designed to support a 33 MHz fclock rate in normal read mode, and 104 MHz in fast

read, the fastest in the industry. The devices use a single low voltage power supply, ranging from 1.65 Volt to

2.0 Volt, to perform read, erase and program operations. The devices can be programmed in standard EPROM

programmers.

The IS25WQ080 are accessed through a 4-wire SPI Interface consisting of Serial Data Input/Output (Sl), Serial

Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins. The devices support page program mode,

where 1 to 256 bytes data can be programmed into the memory in one program operation. These devices are

divided into uniform 4 Kbyte sectors or uniform 64 Kbyte blocks.

The IS25WQ080 are manufactured on pFLASH™’s advanced non-volatile technology. The devices are offered

in 8-pin SOIC 150mil/208mil, 8-contact WSON, 8-pin PDIP and 8-pin VVSOP 150mil, .

Integrated Silicon Solution, Inc.- www.issi.com

Rev. A

09/18/2012

12 3 4 5 6 7...60

中文翻译

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与IS25WQ080相关器件

型号	品牌	获取价格	描述	数据表
IS26F080A-3T	ISSI	获取价格	EEPROM, 8MX1, Serial, CMOS, PDSO24, TSOP2-28/24
IS26F080A-3TE	ISSI	获取价格	EEPROM, 8MX1, Serial, CMOS, PDSO24, TSOP2-28/24
IS26F080A-3TER	ISSI	获取价格	EEPROM, 8MX1, Serial, CMOS, PDSO24, TSOP2-28/24
IS26F080A-3TI	ISSI	获取价格	EEPROM, 8MX1, Serial, CMOS, PDSO24, TSOP2-28/24
IS26F080A-3TIR	ISSI	获取价格	EEPROM, 8MX1, Serial, CMOS, PDSO24, TSOP2-28/24
IS26F080A-3T-R	ISSI	获取价格	Flash, 1072KX8, PDSO24, TSOP2-28/24
IS26F080A-5TE	ISSI	获取价格	EEPROM, 8MX1, Serial, CMOS, PDSO24, TSOP2-28/24
IS26F080A-5TER	ISSI	获取价格	EEPROM, 8MX1, Serial, CMOS, PDSO24, TSOP2-28/24
IS26F080A-5TI	ISSI	获取价格	EEPROM, 8MX1, Serial, CMOS, PDSO24, TSOP2-28/24
IS26F080A-5TIR	ISSI	获取价格	EEPROM, 8MX1, Serial, CMOS, PDSO24, TSOP2-28/24

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