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IS25C128A-2WLI PDF预览

IS25C128A-2WLI

更新时间: 2024-11-09 07:07:23
品牌 Logo 应用领域
美国芯成 - ISSI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
20页 404K
描述
EEPROM, 16KX8, Serial, CMOS, PDSO8, 0.200 INCH, LEAD FREE, EIAJ, PLASTIC, SOP-8

IS25C128A-2WLI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.84
最大时钟频率 (fCLK):5 MHzJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:5.25 mm
内存密度:131072 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:16384 words字数代码:16000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:2.16 mm
串行总线类型:SPI最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:5.29 mm最长写入周期时间 (tWC):5 ms

IS25C128A-2WLI 数据手册

 浏览型号IS25C128A-2WLI的Datasheet PDF文件第2页浏览型号IS25C128A-2WLI的Datasheet PDF文件第3页浏览型号IS25C128A-2WLI的Datasheet PDF文件第4页浏览型号IS25C128A-2WLI的Datasheet PDF文件第5页浏览型号IS25C128A-2WLI的Datasheet PDF文件第6页浏览型号IS25C128A-2WLI的Datasheet PDF文件第7页 
IS25C128A  
128K-bit SPI SERIAL  
ELECTRICALLY ERASABLE PROM  
AdvancedInformation  
JUNE2007  
FEATURES  
• SerialPeripheralInterface(SPI)Compatible  
— Supports SPI Modes 0 (0,0) and 3 (1,1)  
• LowpowerCMOS  
DESCRIPTION  
The IS25C128A is electrically erasable PROM devices  
that use the Serial Peripheral Interface (SPI) for  
communications. The IS25C128A is 128Kbit  
(16K x 8). The IS25C128A EEPROMs is offered in a  
wide operating voltage range of 1.8V to 5.5V for  
compatibility with most application voltages. ISSI  
designed the IS25C128A to be an efficient SPI EEPROM  
solution. The devices are packaged in 8-pin JEDEC  
SOIC, 8-pin EIAJ SOIC, 8-pin TSSOP and 8-pin PDIP.  
— Active current less than 3.0 mA (1.8V)  
— Standby current less than 15 µA (1.8V)  
• Low-voltageOperation  
— Vcc = 1.8V to 5.5V  
• Block Write Protection  
— Protect 1/4, 1/2, or Entire Array  
• 64 byte page write mode  
The functional features of the IS25C128A allow them to  
beamongthemostadvancedserialnon-volatilememo-  
ries available. Each device has a Chip-Select (CS) pin,  
and a 3-wire interface of Serial Data In (SI), Serial Data  
Out (SO), and Serial Clock (SCK). While the 3-wire  
interfaceoftheIS25C128Aprovidesforhigh-speed  
access, a HOLD pin allows the memories to ignore the  
interface in a suspended state; later the HOLD pin re-  
activates communication without re-initializing the serial  
sequence. A Status Register facilitates a flexible write  
protection mechanism, and a device-ready bit (RDY).  
— Partial page writes allowed  
• 10 MHz Clock Rate (5V)  
• Self timed write cycles  
— 5ms max @ 2.5V  
• High-reliability  
— Endurance: 1,000,000 cycles  
— Data retention: 40 years  
• 8-pin SOIC, 8-pin TSSOP and 8-pin PDIP packages  
available  
• IndustrialandAutomotivetemperatureranges  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc.  
1
Advanced Information Rev. 00D  
06/22/07  

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