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IS25C128A-2ZLI PDF预览

IS25C128A-2ZLI

更新时间: 2024-11-08 05:39:31
品牌 Logo 应用领域
美国芯成 - ISSI 可编程只读存储器
页数 文件大小 规格书
17页 194K
描述
128K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM

IS25C128A-2ZLI 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:TSSOP,
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.84最大时钟频率 (fCLK):5 MHz
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.4 mm内存密度:131072 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:16384 words
字数代码:16000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:16KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.2 mm串行总线类型:SPI
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

IS25C128A-2ZLI 数据手册

 浏览型号IS25C128A-2ZLI的Datasheet PDF文件第2页浏览型号IS25C128A-2ZLI的Datasheet PDF文件第3页浏览型号IS25C128A-2ZLI的Datasheet PDF文件第4页浏览型号IS25C128A-2ZLI的Datasheet PDF文件第5页浏览型号IS25C128A-2ZLI的Datasheet PDF文件第6页浏览型号IS25C128A-2ZLI的Datasheet PDF文件第7页 
IS25C128A  
128K-bit SPI SERIAL  
ELECTRICALLY ERASABLE PROM  
AdvancedInformation  
DECEMBER2008  
FEATURES  
• SerialPeripheralInterface(SPI)Compatible  
— Supports SPI Modes 0 (0,0) and 3 (1,1)  
• LowpowerCMOS  
— Active current less than 3.0 mA (1.8V)  
— Standby current less than 15 µA (1.8V)  
• Low-voltageOperation  
DESCRIPTION  
The IS25C128A is electrically erasable PROM devices  
that use the Serial Peripheral Interface (SPI) for  
communications. The IS25C128A is 128Kbit  
(16K x 8). The IS25C128A EEPROMs is offered in a  
wide operating voltage range of 1.8V to 5.5V for  
compatibility with most application voltages. ISSI  
designed the IS25C128A to be an efficient SPI EEPROM  
solution. The device is offered in lead-free, RoHS,  
halogenfreeorGreen. Theavailablepackagetypesare  
8-pin SOIC, TSSOP and PDIP.  
— Vcc = 1.8V to 5.5V  
• Block Write Protection  
— Protect 1/4, 1/2, or Entire Array  
• 64-bytepagewritemode  
— Partial page writes allowed  
• 10 MHz Clock Rate (5V)  
• Self timed write cycles  
The functional features of the IS25C128A allow them to  
beamongthemostadvancedserialnon-volatilememo-  
ries available. Each device has a Chip-Select (CS) pin,  
and a 3-wire interface of Serial Data In (SI), Serial Data  
Out (SO), and Serial Clock (SCK). While the 3-wire  
interfaceoftheIS25C128Aprovidesforhigh-speed  
access, a HOLD pin allows the memories to ignore the  
interface in a suspended state; later the HOLD pin re-  
activates communication without re-initializing the serial  
sequence. A Status Register facilitates a flexible write  
protection mechanism, and a device-ready bit (RDY).  
— 5ms max @ 2.5V  
• High-reliability  
— Endurance: 1,000,000 cycles  
— Data retention: 40 years  
• Packages: SOIC/SOP, TSSOP and PDIP  
• Industrialtemperaturerange  
• Leadfree  
Copyright © 2008 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without  
notice. ISSIproductsarenotdesigned, intended, authorizedorwarrantedforuseascomponentsinsystemsorequipmentintendedforcriticalmedicalorsurgicalequipment,  
aerospace systems, or for other applications planned to support or sustain life. It is the customer's obligation to optimize the design in their own products for the best  
performance and optimization on the functionality and etc. ISSI assumes no liability arising out of the application or use of any information, products or services described  
herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and prior placing orders for products.  
Integrated Silicon Solution, Inc.  
1
Advanced Information Rev. 00E  
11/25/08  

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