是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SON | 包装说明: | HVSON, |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.51 |
风险等级: | 5.76 | Is Samacsys: | N |
最大时钟频率 (fCLK): | 10 MHz | JESD-30 代码: | R-XDSO-N8 |
JESD-609代码: | e3 | 长度: | 3 mm |
内存密度: | 16384 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 8 | 湿度敏感等级: | 1 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 2048 words | 字数代码: | 2000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 2KX8 |
封装主体材料: | UNSPECIFIED | 封装代码: | HVSON |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
并行/串行: | SERIAL | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 座面最大高度: | 0.8 mm |
串行总线类型: | SPI | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 1.8 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | NO LEAD | 端子节距: | 0.5 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
宽度: | 2 mm | 最长写入周期时间 (tWC): | 5 ms |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS25C16-2DLI-TR | ISSI |
获取价格 |
EEPROM, 2KX8, Serial, CMOS, LEAD FREE, MO-229, DFN-8 | |
IS25C16-2G | ISSI |
获取价格 |
EEPROM, 2KX8, Serial, CMOS, PDSO8, SOIC-8 | |
IS25C16-2GI | ISSI |
获取价格 |
8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C16-2GLI | ISSI |
获取价格 |
8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C16-2PI | ISSI |
获取价格 |
8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C16-2PLI | ISSI |
获取价格 |
8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C16-2ZI | ISSI |
获取价格 |
8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C16-2ZLI | ISSI |
获取价格 |
8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C16-3G | ISSI |
获取价格 |
EEPROM, 2KX8, Serial, CMOS, PDSO8, SOIC-8 | |
IS25C16-3GI | ISSI |
获取价格 |
EEPROM, 2KX8, Serial, CMOS, PDSO8, SOIC-8 |