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IRLR7843CTRLPBF PDF预览

IRLR7843CTRLPBF

更新时间: 2024-11-29 21:01:39
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
11页 365K
描述
Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

IRLR7843CTRLPBF 数据手册

 浏览型号IRLR7843CTRLPBF的Datasheet PDF文件第2页浏览型号IRLR7843CTRLPBF的Datasheet PDF文件第3页浏览型号IRLR7843CTRLPBF的Datasheet PDF文件第4页浏览型号IRLR7843CTRLPBF的Datasheet PDF文件第5页浏览型号IRLR7843CTRLPBF的Datasheet PDF文件第6页浏览型号IRLR7843CTRLPBF的Datasheet PDF文件第7页 
PD - 95440B  
IRLR7843PbF  
IRLU7843PbF  
HEXFET® Power MOSFET  
Applications  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
l Lead-Free  
VDSS RDS(on) max  
Qg  
34nC  
3.3m  
30V  
Benefits  
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
I-Pak  
IRLR7843PbF IRLU7843PbF  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
± 20  
161  
113  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TC = 25°C  
@ TC = 100°C  
D
D
A
620  
140  
71  
DM  
Maximum Power Dissipation  
Maximum Power Dissipation  
P
P
@TC = 25°C  
@TC = 100°C  
W
D
D
Linear Derating Factor  
Operating Junction and  
0.95  
-55 to + 175  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
1.05  
50  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB Mount)  
°C/W  
Junction-to-Ambient  
110  
Notes  through are on page 11  
www.irf.com  
1
04/30/08  

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