Datasheet > IRLR7843TR

IRLR7843TR

更新时间： 2024-05-23 22:23:14

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	490K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:161A;Vgs(th)(V):±20;漏源导通电阻:3.3mΩ@10V;漏源导通电阻:4mΩ@4.5V

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IRLR7843TR 数据手册

IRLR7843

30V N-Channel MOSFET

UMW

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

Benefits

l Very Low RDS(on) at 4.5V V

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

V_DS

(V) =

30V

R_DS(ON)< 3.3mΩ (V_GS= 10V)

34nC

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

161

113

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_C= 100°C

620

140

Maximum Power Dissipation

@T_C= 25°C

@T_C= 100°C

Linear Derating Factor

Operating Junction and

0.95

-55 to + 175

W/°C

°C

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

1.05

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB Mount)

°C/W

Junction-to-Ambient

110

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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