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IRLR7843HR PDF预览

IRLR7843HR

更新时间: 2024-01-30 20:43:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 202K
描述
Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

IRLR7843HR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:LEAD FREE, PLASTIC, DPAK-3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.13雪崩能效等级(Eas):1440 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):161 A
最大漏极电流 (ID):30 A最大漏源导通电阻:0.0033 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):140 W最大脉冲漏极电流 (IDM):620 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRLR7843HR 数据手册

 浏览型号IRLR7843HR的Datasheet PDF文件第2页浏览型号IRLR7843HR的Datasheet PDF文件第3页浏览型号IRLR7843HR的Datasheet PDF文件第4页浏览型号IRLR7843HR的Datasheet PDF文件第5页浏览型号IRLR7843HR的Datasheet PDF文件第6页浏览型号IRLR7843HR的Datasheet PDF文件第7页 
PD - 94638A  
IRLR7843  
IRLU7843  
HEXFET® Power MOSFET  
Applications  
VDSS RDS(on) max  
Qg  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
3.3m  
30V  
34nC  
Benefits  
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRLR7843  
I-Pak  
IRLU7843  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain-to-Source Voltage  
30  
V
V
Gate-to-Source Voltage  
± 20  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
161  
113  
620  
I
I
I
@ TC = 25°C  
@ TC = 100°C  
D
D
A
DM  
Maximum Power Dissipation  
Maximum Power Dissipation  
P
P
@TC = 25°C  
@TC = 100°C  
140  
71  
W
D
D
Linear Derating Factor  
Operating Junction and  
0.95  
-55 to + 175  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.05  
50  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
°C/W  
110  
Notes  through are on page 11  
www.irf.com  
1
12/30/03  

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