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IRLI630 PDF预览

IRLI630

更新时间: 2024-11-08 22:23:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 227K
描述
ADVANCED POWER MOSFET

IRLI630 数据手册

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IRLW/I630A  
FEATURES  
BVDSS = 200 V  
RDS(on) = 0.4  
ID = 9 A  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
Improved Gate Charge  
Extended Safe Operating Area  
D2-PAK  
I2-PAK  
150 C Operating Temperature  
°
2
Lower Leakage Current: 10 A (Max.) @ VDS = 200V  
µ
Lower RDS(ON): 0.335 (Typ.)  
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
200  
9
Units  
VDSS  
Drain-to-Source Voltage  
V
Continuous Drain Current (TC=25°C)  
Continuous Drain Current (TC=100°C)  
Drain Current-Pulsed  
ID  
A
5.7  
32  
IDM  
VGS  
EAS  
IAR  
(1)  
A
V
Gate-to-Source Voltage  
20  
±
(2)  
(1)  
(1)  
(3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
54  
mJ  
A
9
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
6.9  
5
mJ  
V/ns  
W
*
Total Power Dissipation (TA=25°C)  
Total Power Dissipation (TC=25°C)  
Linear Derating Factor  
3.1  
69  
PD  
W
0.55  
W/°C  
Operating Junction and  
TJ , TSTG  
- 55 to +150  
300  
Storage Temperature Range  
°C  
Maximum Lead Temp. for Soldering  
Purposes, 1/8 from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
RθJC  
Characteristic  
Typ.  
Max.  
Units  
Junction-to-Case  
--  
--  
--  
1.81  
40  
RθJA  
*
Junction-to-Ambient  
Junction-to-Ambient  
°C/W  
RθJA  
62.5  
When mounted on the minimum pad size recommended (PCB Mount).  
*
Rev. B  
©1999 Fairchild Semiconductor Corporation  
1

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