IRLI630A

更新时间： 2024-11-19 03:43:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	227K
描述
Advanced Power MOSFET

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数据手册

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IRLI630A 数据手册

IRLW/I630A

FEATURES

BV_DSS= 200 V

R_DS(on)= 0.4Ω

I_D= 9 A

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

♦

Improved Gate Charge

Extended Safe Operating Area

D²-PAK

I²-PAK

150 C Operating Temperature

Lower Leakage Current: 10 A (Max.) @ V_DS= 200V

Lower R_DS(ON): 0.335 (Typ.)

Ω

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

200

Units

V_DSS

Drain-to-Source Voltage

Continuous Drain Current (T_C=25°C)

Continuous Drain Current (T_C=100°C)

Drain Current-Pulsed

I_D

5.7

I_DM

V_GS

E_AS

I_AR

(1)

Gate-to-Source Voltage

(2)

(1)

(3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

6.9

V/ns

Total Power Dissipation (T_A=25°C)

Total Power Dissipation (T_C=25°C)

Linear Derating Factor

3.1

P_D

0.55

W/°C

Operating Junction and

T_J, T_STG

- 55 to +150

300

Storage Temperature Range

°C

Maximum Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

T_L

Thermal Resistance

Symbol

R_θJC

Characteristic

Typ.

Max.

Units

Junction-to-Case

1.81

R_θJA

Junction-to-Ambient

°C/W

R_θJA

62.5

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

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与IRLI630A相关器件

型号	品牌	获取价格	描述	数据表
IRLI630ATU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRLI630G	VISHAY	获取价格	Power MOSFET
IRLI630G	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A)
IRLI630G-002PBF	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-003PBF	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-004	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-004PBF	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-005	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-005PBF	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-006	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met