IRLI630G

更新时间： 2024-11-18 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	299K
描述
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A)

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IRLI630G 数据手册

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PD - 9.1236

IRLI630G

HEXFET^®Power MOSFET

Isolated Package

High Voltage Isolation = 2.5KVRMS

Sink to Lead Creepage Dist. 4.8mm

Logic-Level Gate Drive

R_DS(ON)Specified at V_GS= 4V & 5V

Fast Switching

V_DSS= 200V

R_DS(on)= 0.40Ω

I_D= 6.2A

Ease of paralleling

Description

Third Generation HEXFETs from International Rectifier provide the designer

with the best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

The TO-220 Fullpak eliminates the need for additional insulating hardware in

commercial-industrial applications. The moulding compound used provides a

high isolation capability and a low thermal resistance between the tab and external

heatsink. This isolation is equivalent to using a 100 micron mica barrier with

standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip

or by a single screw fixing.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 5.0V

Pulsed Drain Current

6.2

3.9

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.28

V_GS

E_AS

I_AR

Gate-to-Source Voltage

±10

Single Pulse Avalanche Energy

Avalanche Current

125

6.2

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

3.5

V/ns

5.0

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

°C

300 (1.6mm from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient

Min.

––––

Typ.

––––

Max.

3.6

Units

R_θJC

R_θJA

°C/W

To Order

Revision 0

12 3 4 5 6 7 8

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与IRLI630G相关器件

型号	品牌	获取价格	描述	数据表
IRLI630G-002PBF	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-003PBF	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-004	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-004PBF	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-005	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-005PBF	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-006	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-006PBF	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-009PBF	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-010	VISHAY	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met

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