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IRLI630G-017 PDF预览

IRLI630G-017

更新时间: 2024-11-20 05:52:43
品牌 Logo 应用领域
威世 - VISHAY 局域网开关晶体管
页数 文件大小 规格书
1页 46K
描述
Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRLI630G-017 数据手册

  

与IRLI630G-017相关器件

型号 品牌 获取价格 描述 数据表
IRLI630G-017PBF VISHAY

获取价格

Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-018 VISHAY

获取价格

Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-018PBF VISHAY

获取价格

Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-019PBF VISHAY

获取价格

Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-024 VISHAY

获取价格

Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-024PBF VISHAY

获取价格

Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-029 VISHAY

获取价格

Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-029PBF VISHAY

获取价格

Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-030 VISHAY

获取价格

Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLI630G-030PBF VISHAY

获取价格

Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met