Datasheet > IRHNMC9A7024

IRHNMC9A7024

更新时间： 2024-03-04 09:49:38

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1189K
描述
Rad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 300 krad(Si) TID, COTS

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IRHNMC9A7024 数据手册

IRHNMC9A7024 (JANSR2N7650U8C)

Radiation Hardened Power MOSFET Surface mount (SMD-0.2 Ceramic Lid)

Device Characteristics

2.1

Electrical Characteristics (Pre-Irradiation)

Table 3

Static and Dynamic Electrical Characteristics @ T_j= 25°C (Unless Otherwise Specified)

Symbol

Parameter

Min. Typ. Max. Unit Test Conditions

Drain-to-Source Breakdown

Voltage

BV_DSS

—

V_GS= 0V, I_D= 1.0mA

Breakdown Voltage Temp.

Coefficient

BV_DSS/T_J

0.06

V/°C Reference to 25°C, I_D= 1.0mA

Static Drain-to-Source On-State

Resistance

R_DS(on)

—

2.0

—

4.0

—

m

V_GS= 12V, I_D2= 20A ¹

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS, I_D= 650A

Gate Threshold Voltage

Coefficient

 V_GS(th)/T_J

Gfs

-7.2

mV/°C

Forward Transconductance

—

1.0

V_DS= 15V, I_D2= 20A ¹

V_DS= 48V, V_GS= 0V

V_DS= 48V, V_GS= 0V, T_J= 125°C

V_GS= 20V

I_DSS

I_GSS

Zero Gate Voltage Drain Current

A

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

100

-100

V_GS= -20V

Q_G

I_D1= 25A

V_DS= 30V

V_GS= 12V

Q_GS

Q_GD

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

6.4

I_D1= 25A **

V_DD= 30V

R_G= 7.5

V_GS= 12V

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

Measured from center of Drain

pad to center of Source pad

L_s+L_D

Total Inductance

—

6.8

—

C_iss

C_oss

C_rss

R_G

Input Capacitance

—

1160

440

2.6

—

V_GS= 0V

V_DS= 25V

ƒ = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

1.5

ƒ = 1.0MHz, open drain



** Switching speed maximum limits are based on manufacturing test equipment and capability.

¹Pulse width  300 µs; Duty Cycle  2%

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2022-04-25

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