Datasheet > IRHNS57160

IRHNS57160

更新时间： 2024-11-21 14:56:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1128K
描述
Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHNS57160 数据手册

PD-97879B

IRHNS57160

JANSR2N7469U2A

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SupIR-SMD)

100V, N-CHANNEL

REF: MIL-PRF-19500/673

TECHNOLOGY

Product Summary

Part Number

IRHNS57160

IRHNS53160

IRHNS55160

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7469U2A

JANSF2N7469U2A

JANSG2N7469U2A

100 kRads(Si)

300 kRads(Si)

500 kRads(Si)

75A*

0.012

SupIR-SMD

Features

Description

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Fast Switching

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

 Light Weight

 Surface Mount

 ESD Rating: Class 3B per MIL-STD-750, Method 1020

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event

Effect (SEE) with useful performance up to LET of 80

(MeV/(mg/cm²). The combination of low RDS(on) and low

gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

75*

300

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

Maximum Power Dissipation

250

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

2.0

V_GS

E_AS

I_AR

±20

363

E_AR

dv/dt

T_J

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

6.0

-55 to + 150

T_STG

°C

300 (for 5s)

3.3 (Typical)

Weight

* Current is limited by package

For Footnotes, refer to the page 2.

2020-04-13

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRHNS57160相关器件

型号	品牌	获取价格	描述	数据表
IRHNS57160SCS	INFINEON	获取价格	Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS57163SE	INFINEON	获取价格	Rad hard, 130V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS57163SESCS	INFINEON	获取价格	Rad hard, 130V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS57260SE	INFINEON	获取价格	Rad hard, 200V, 53A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS57260SESCS	INFINEON	获取价格	Rad hard, 200V, 53A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS57264SE	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS57Z60	INFINEON	获取价格	Rad hard, 30V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 k
IRHNS57Z60SCS	INFINEON	获取价格	Rad hard, 30V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 k
IRHNS597064	INFINEON	获取价格	Rad hard, -60V, 56A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS597064SCS	INFINEON	获取价格	Rad hard, -60V, 56A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100

与IRHNS57160相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNS57160

IRHNS57160 数据手册

与IRHNS57160相关器件

与IRHNS57160相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNS57160

IRHNS57160 数据手册

与IRHNS57160相关器件

与IRHNS57160相关文章

您还可以找

您在本页遇到什么问题？