Datasheet > IRHNS57163SESCS

IRHNS57163SESCS

更新时间： 2024-11-25 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	2150K
描述
Rad hard, 130V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, QIRL

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IRHNS57163SESCS 数据手册

PD-97925A

IRHNS57163SE

JANSR2N7472U2A

130V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SupIR-SMD)

REF: MIL-PRF-19500/684

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

QPL Part Number

IRHNS57163SE 100 kRads (Si)

75A*

JANSR2N7472U2A

0.0135

SupIR-SMD

Features

Description



Single Event Effect (SEE) Hardened

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have been

characterized for Single Event Effects (SEE) with useful

performance up to an LET of 80(MeV/(mg/cm²)). The

combination of low R_DS(on)and low gate charge reduces the

power losses in switching applications such as DC to DC

converters and motor control. These devices retain all of the

well established advantages of MOSFETs such as voltage

control, fast switching and temperature stability of electrical

parameters.

 Ultra Low RDS(on)

 Low Total Gate Charge



Simple Drive Requirements

Hermetically Sealed

Surface Mount

Ceramic package

Light Weight

ESD Rating: Class 3B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

Value

75*

Parameter

Units

_DM@ T_C= 25°C

Pulsed Drain Current 

300

250

2.0

± 20

280

P_D@ T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

V/ns

5.5

-55 to + 150

T_STG

Storage Temperature Range

°C

Package Mounting Surface Temperature

Weight

300 (for 5s)

3.3(Typical)

*Current is limited by package

For Footnotes refer to the page 2.

2019-11-01

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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与IRHNS57163SESCS相关器件

型号	品牌	获取价格	描述	数据表
IRHNS57260SE	INFINEON	获取价格	Rad hard, 200V, 53A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS57260SESCS	INFINEON	获取价格	Rad hard, 200V, 53A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS57264SE	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS57Z60	INFINEON	获取价格	Rad hard, 30V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 k
IRHNS57Z60SCS	INFINEON	获取价格	Rad hard, 30V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 k
IRHNS597064	INFINEON	获取价格	Rad hard, -60V, 56A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS597064SCS	INFINEON	获取价格	Rad hard, -60V, 56A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS597160	INFINEON	获取价格	Rad hard, -100V, 47A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS597160SCS	INFINEON	获取价格	Rad hard, -100V, 47A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS597260	INFINEON	获取价格	Rad hard, -100V, 47A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100

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