Datasheet > IRHNMC9A7024

IRHNMC9A7024

更新时间： 2024-03-04 09:49:38

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1189K
描述
Rad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 300 krad(Si) TID, COTS

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IRHNMC9A7024 数据手册

IRHNMC9A7024 (JANSR2N7650U8C)

Radiation Hardened Power MOSFET Surface mount (SMD-0.2 Ceramic Lid)

Absolute Maximum Ratings

Table 2

Absolute Maximum Ratings (Pre-Irradiation)

Symbol

Parameter

Value

25*

Unit

I_D1@ V_GS= 12V, T_C= 25°C

Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current ¹

100

Maximum Power Dissipation

Linear Derating Factor

W/^°C

0.43

± 20

520

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy ²

Avalanche Current ¹

I_AR

E_AR

Repetitive Avalanche Energy ¹

Peak Diode Reverse Recovery ³

5.4

V/ns

dv/dt

8.6

T_J

T_STG

Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

-55 to +150

^°C

300 (for 5s)

0.25 (Typical)

*Current is limited by package

¹Repetitive Rating; Pulse width limited by maximum junction temperature.

²V_DD= 60V, starting T_J= 25°C, L = 2.6mH, Peak I_L= 20A, V_GS= 20V

³I_SD 25A, di/dt  1300A/µs, V_DD 60V, T_J 150°C

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2022-04-25

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