Datasheet > IRHNMC9A7024

IRHNMC9A7024

更新时间： 2024-03-04 09:49:38

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1189K
描述
Rad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 300 krad(Si) TID, COTS

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IRHNMC9A7024 数据手册

IRHNMC9A7024 (JANSR2N7650U8C)

Radiation Hardened Power MOSFET Surface mount (SMD-0.2 Ceramic Lid)

Device Characteristics

2.2

Source-Drain Diode Ratings and Characteristics (Pre-Irradiation)

Table 4

Source-Drain Diode Characteristics

Symbol Parameter

Min. Typ. Max. Unit Test Conditions

I_S

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode) ¹

—

100

1.2

150

—

I_SM

V_SD

t_rr

Diode Forward Voltage

—

T_J= 25°C, I_S= 25A, V_GS= 0V

Reverse Recovery Time

250

T_J= 25°C, I_F= 25A, V_DD≤ 25V

di/dt = 100A/µs ²

Q_rr

t_on

Reverse Recovery Charge

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

2.3

Thermal Characteristics

Table 5

Symbol

R_JC

Thermal Resistance

Parameter

Min. Typ.

Max.

Unit

^°C/W

Junction-to-Case

—

2.3

2.4

Radiation Characteristics

IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness

assurance program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for

total ionizing dose (per notes 3 and 4) using the TO-3 package. Both pre- and post-irradiation performance are

tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.

2.4.1

Electrical Characteristics — Post Total Dose Irradiation

Table 6

Electrical Characteristics @ T_j= 25°C, Post Total Dose Irradiation ^{3, 4}

Up to 300 krads (Si)⁵

Symbol

Parameter

Unit Test Conditions

Min.

2.0

—

Max.

—

BV_DSS

V_GS(th)

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 650A

V_GS= 20V

4.0

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source On-State Resistance (TO-3) ²

100

-100

1.0

I_GSS

µA

—

V_GS= -20V

I_DSS

—

V_DS= 48V, V_GS= 0V

R_DS(on)

—

m V_GS= 12V, I_D2= 20A

Static Drain-to-Source On-State Resistance

(SMD-0.2) ²

R_DS(on)

V_SD

—

m V_GS= 12V, I_D2= 20A

Diode Forward Voltage

1.2

V_GS= 0V, I_F= 25A

¹Repetitive Rating; Pulse width limited by maximum junction temperature.

²Pulse width  300 µs; Duty Cycle  2%

³Total Dose Irradiation with V_GSBias. V_GS=-12V applied and V_DS= 0 during irradiation per MIL-STD-750, Method 1019, condition A.

⁴Total Dose Irradiation with V_DSBias. V_DS= 48V applied and V_GS= 0 during irradiation per MlL-STD-750, Method 1019, condition A.

⁵Part numbers IRHNMC9A7024 (JANSR2N7650U8C) and IRHNMC9A3024 (JANSF2N7650U8C).

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与IRHNMC9A7024相关器件

型号	品牌	获取价格	描述	数据表
IRHNMC9A7120	INFINEON	获取价格	Rad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 100 kr
IRHNPC9A3014	INFINEON	获取价格	Rad hard, 60V, 10A, single, N-channel MOSFET, R9 in SMD-0.1 package -300 krad(Si) TID, COT
IRHNPC9A3110	INFINEON	获取价格	Rad hard, 100V, 9A, N-channel MOSFET, R9 in S
IRHNPC9A7014	INFINEON	获取价格	Rad hard, 60V, 10A, single, N-channel MOSFET, R9 in SMD-0.1 package -100 krad(Si) TID, COT
IRHNPC9A7110	INFINEON	获取价格	Rad hard, 100V, 9A, N-channel MOSFET, R9 in S
IRHNS53160	INFINEON	获取价格	Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 300
IRHNS53160SCS	INFINEON	获取价格	Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 300
IRHNS57064	INFINEON	获取价格	Rad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 k
IRHNS57064SCS	INFINEON	获取价格	ad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 kr
IRHNS57160	INFINEON	获取价格	Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100

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