Datasheet > IRHNS67160

IRHNS67160

更新时间： 2024-11-21 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	1520K
描述
Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS

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IRHNS67160 数据手册

PD-97906A

IRHNS67160

JANSR2N7579U2A

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SupIR-SMD)

REF: MIL-PRF-19500/760

TECHNOLOGY

Product Summary

Part Number

IRHNS67160

IRHNS63160

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7579U2A

JANSF2N7579U2A

100 kRads(Si)

300 kRads(Si)

56A*

0.010

SupIR-SMD

Features

Description



Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Hermetically Sealed

Ceramic Package

Light Weight

Surface Mount

ESD Rating: Class 3A per MIL-STD-750,

Method 1020

IR HiRel R6 technology provides high performance power

MOSFETs for space applications. These devices have been

characterized for both Total Dose and Single Event Effect

(SEE) with useful performance up to LET of 90 (MeV/(mg/cm²).

The combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC-DC

converters and motor controllers. These devices retain all of the

well established advantages of MOSFETs such as voltage

control, fast switching, and temperature stability of electrical

parameters.

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

56*

224

250

2.0

±20

462

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

V_GS

E_AS

I_AR

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

V/ns

5.0

-55 to + 150

T_STG

°C

300 (for 5s)

3.3 (Typical)

Weight

* Current is limited by package

For Footnotes, refer to the page 2.

International Rectifier HiRel Products, Inc.

2020-04-13

12 3 4 5 6 7...9

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与IRHNS67160相关器件

型号	品牌	获取价格	描述	数据表
IRHNS67160SCS	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS67164	INFINEON	获取价格	Rad hard, 150V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS67164SCS	INFINEON	获取价格	Rad hard, 150V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS67260	INFINEON	获取价格	Rad hard, 200V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS67260SCS	INFINEON	获取价格	Rad hard, 200V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS67264	INFINEON	获取价格	Rad hard, 250V, 50A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS67264SCS	INFINEON	获取价格	Rad hard, 250V, 50A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS7460SE	INFINEON	获取价格	Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS7460SESCS	INFINEON	获取价格	Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS9A3064	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300

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