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IRHNS67164 PDF预览

IRHNS67164

更新时间: 2024-02-21 15:53:54
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 1472K
描述
Rad hard, 150V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS

IRHNS67164 数据手册

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PD-97880B  
IRHNS67164  
JANSR2N7581U2A  
150V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SupIR-SMD)  
REF: MILR-PRF-19500/760  
6TECHNOLOGY  
Product Summary  
Part Number  
IRHNS67164  
IRHNS63164  
Radiation Level RDS(on)  
ID  
QPL Part Number  
100 kRads(Si)  
300 kRads(Si)  
56A*  
56A*  
JANSR2N7581U2A  
JANSF2N7581U2A  
0.018  
0.018  
SupIR-SMD  
Features  
Description  
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Fast Switching  
Simple Drive Requirements  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Surface Mount  
ESD Rating: Class 3A per MIL-STD-750, Method 1020  
IR HiRel R6 technology provides high performance power  
MOSFETs for space applications. These devices have  
been characterized for both Total Dose and Single Event  
Effect (SEE) with useful performance up to LET of 90  
(MeV/(mg/cm2). The combination of low RDS(on) and low  
gate charge reduces the power losses in switching  
applications such as DC-DC converters and motor  
controllers. These devices retain all of the well established  
advantages of MOSFETs such as voltage control, fast  
switching, ease of paralleling and temperature stability of  
electrical parameters.  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current  
56*  
A
49  
224  
IDM @ TC = 25°C  
PD @ TC = 25°C  
Pulsed Drain Current   
Maximum Power Dissipation  
250  
W
W/°C  
V
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
2.0  
VGS  
EAS  
IAR  
±20  
283  
mJ  
A
56  
EAR  
dv/dt  
TJ  
25  
mJ  
V/ns  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
7.5  
-55 to + 150  
TSTG  
°C  
g
300 (for 5s)  
3.3 (Typical)  
Weight  
* Current is limited by package  
For Footnotes, refer to the page 2.  
1
2020-04-13  
International Rectifier HiRel Products, Inc.  

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