Datasheet > IRHNMC9A7120

IRHNMC9A7120

更新时间： 2024-09-24 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1866K
描述
Rad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 100 krad(Si) TID, COTS

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IRHNMC9A7120 数据手册

IRHNMC9A7120 (JANSR2N7651U8C)

PD-97974A

Radiation Hardened Power MOSFET

Surface Mount (SMD-0.2 Ceramic Lid)

100V, 23A, N-channel, R9 Superjunction Technology

Features

Product Summary



Single event effect (SEE) hardened



BV_DSS: 100V

I_D: 23A

R_DS(on),max: 55m

Q_Gmax: 23nC

(up to LET of 89.8 MeV·cm²/mg)



Low R_DS(on)

Fast switching

REF: MIL-PRF-19500/776

Low total gate charge

Simple drive requirements

Hermetically sealed

Ceramic package

Light weight

Surface mount

ESD rating: Class 1C per MIL-STD-750, Method 1020

Potential Applications

SMD-0.2 (Ceramic Lid)



Isolated DC-DC converter

Motor drives

Point-of-Load (PoL) converter

Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy

Transfer (LET) up to 89.8 MeV·cm²/mg. Their combination of low R_DS(on)and fast switching times will allow for

better performance in applications such as DC-DC converter or motor drives. These devices retain all of the well-

established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical

parameters.

Ordering Information

Table 1

Ordering options

Part number

IRHNMC9A7120

Package

Screening Level

COTS

TID Level

SMD-0.2 (Ceramic Lid)

100 krad(Si)

300 krad(Si)

JANSR2N7651U8C

IRHNMC9A3120

JANS

COTS

JANSF2N7651U8C

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2022-07-29

12 3 4 5 6 7...14

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与IRHNMC9A7120相关器件

型号	品牌	获取价格	描述	数据表
IRHNPC9A3014	INFINEON	获取价格	Rad hard, 60V, 10A, single, N-channel MOSFET, R9 in SMD-0.1 package -300 krad(Si) TID, COT
IRHNPC9A3110	INFINEON	获取价格	Rad hard, 100V, 9A, N-channel MOSFET, R9 in S
IRHNPC9A7014	INFINEON	获取价格	Rad hard, 60V, 10A, single, N-channel MOSFET, R9 in SMD-0.1 package -100 krad(Si) TID, COT
IRHNPC9A7110	INFINEON	获取价格	Rad hard, 100V, 9A, N-channel MOSFET, R9 in S
IRHNS53160	INFINEON	获取价格	Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 300
IRHNS53160SCS	INFINEON	获取价格	Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 300
IRHNS57064	INFINEON	获取价格	Rad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 k
IRHNS57064SCS	INFINEON	获取价格	ad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 kr
IRHNS57160	INFINEON	获取价格	Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS57160SCS	INFINEON	获取价格	Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100

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