PD-97905C
IRHNS597160
JANSR2N7550U2A
100V, P-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SupIR-SMD)
REF: MIL-PRF-19500/713
TECHNOLOGY
R
Product Summary
Part Number
IRHNS597160
IRHNS593160
Radiation Level RDS(on)
ID
QPL Part Number
100 kRads(Si)
300 kRads(Si)
-47A
-47A
JANSR2N7550U2A
JANSF2N7550U2A
0.049
0.049
SupIR-SMD
Description
Features
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750, Method 1020
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for Single Event Effects (SEE) with
useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge
reduces the power losses in switching applications such as
DC to DC converters and motor control. These devices
retain all of the well established advantages of MOSFETs
such as voltage control, fast switching, and temperature
stability of electrical parameters.
Absolute Maximum Ratings
Pre-Irradiation
Value
Symbol
Parameter
Units
ID1 @ VGS = -12V, TC = 25°C
Continuous Drain Current
-47
A
ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current
-30
-188
250
2.0
IDM @TC = 25°C
PD @TC = 25°C
Pulsed Drain Current
W
W/°C
V
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
VGS
EAS
IAR
±20
400
-47
25
mJ
A
mJ
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
V/ns
-10
-55 to + 150
TSTG
°C
g
300 (for 5s)
3.3 (Typical)
Weight
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2020-09-14