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IRHNS597160SCS PDF预览

IRHNS597160SCS

更新时间: 2023-12-06 20:12:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 1295K
描述
Rad hard, -100V, 47A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, QIRL

IRHNS597160SCS 数据手册

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PD-97905C  
IRHNS597160  
JANSR2N7550U2A  
100V, P-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SupIR-SMD)  
REF: MIL-PRF-19500/713  
TECHNOLOGY  
R
5
Product Summary  
Part Number  
IRHNS597160  
IRHNS593160  
Radiation Level RDS(on)  
ID  
QPL Part Number  
100 kRads(Si)  
300 kRads(Si)  
-47A  
-47A  
JANSR2N7550U2A  
JANSF2N7550U2A  
0.049  
0.049  
SupIR-SMD  
Description  
Features  
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Surface Mount  
ESD Rating: Class 3A per MIL-STD-750, Method 1020  
IR HiRel R5 technology provides high performance power  
MOSFETs for space applications. These devices have  
been characterized for Single Event Effects (SEE) with  
useful performance up to an LET of 80 (MeV/(mg/cm2)).  
The combination of low RDS(on) and low gate charge  
reduces the power losses in switching applications such as  
DC to DC converters and motor control. These devices  
retain all of the well established advantages of MOSFETs  
such as voltage control, fast switching, and temperature  
stability of electrical parameters.  
Absolute Maximum Ratings  
Pre-Irradiation  
Value  
Symbol  
Parameter  
Units  
ID1 @ VGS = -12V, TC = 25°C  
Continuous Drain Current  
-47  
A
ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current  
-30  
-188  
250  
2.0  
IDM @TC = 25°C  
PD @TC = 25°C  
Pulsed Drain Current   
W
W/°C  
V
Maximum Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
VGS  
EAS  
IAR  
±20  
400  
-47  
25  
mJ  
A
mJ  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
V/ns  
-10  
-55 to + 150  
TSTG  
°C  
g
300 (for 5s)  
3.3 (Typical)  
Weight  
For Footnotes, refer to the page 2.  
1
International Rectifier HiRel Products, Inc.  
2020-09-14  

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