Datasheet > IRHNJ9A7130SCS

IRHNJ9A7130SCS

更新时间： 2023-06-19 14:26:25

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	388K
描述
Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad TID, QIRL

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IRHNJ9A7130SCS 数据手册

IRHNJ9A7130

Pre-Irradiation

Radiation Characteristics

IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance

program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose

(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using

the same drive circuitry and test conditions in order to provide a direct comparison.

Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation 

Up to 300 kRads (Si) ¹

Parameter

Units

Test Conditions

Min.

Max.

BV_DSS

V_GS(th)

I_GSS

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

100

–––

V_GS= 0V, I_D= 1.0mA

V_DS= V_GS, I_D= 1.0mA

V_GS= 20V

2.0

–––

4.0

100

-100

1.0

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

µA

I_GSS

V_GS= -20V

I_DSS

V_DS= 80V, V_GS= 0V

Static Drain-to-Source 

On-State Resistance (TO-3)

R_DS(on)

–––

V_GS= 12V, I_D= 22A 

m

Static Drain-to-Source 

On-State Resistance (SMD-0.5)

R_DS(on)

V_SD

–––

V_GS= 12V, I_D= 22A 

V_GS= 0V, I_D= 35A 

m

Diode Forward Voltage

1.2

1. Part numbers IRHNJ9A7130 and IRHNJ9A3130

IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects

(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Typical Single Event Effect Safe Operating Area

VDS (V)

LET

Energy

(MeV)

Range

(µm)

(MeV/(mg/cm²))

@ VGS = 0V @ VGS = -1V @ VGS = -5V @ VGS = -10V

37 ± 5%

59.8 ± 5%

89.8 ± 5%

417 ± 7.5%

753 ± 7.5%

1515 ± 7.5%

50 ± 7.5%

60 ± 7.5%

82 ± 7.5%

100

–––

100

–––

120

100

LET = 37 ± 5%

LET = 59.8 ± 5%

LET = 89.8 ± 5%

-2

-4

-6

-8

-10

Bias VGS (V)

Fig a. Typical Single Event Effect, Safe Operating Area

For Footnotes, refer to the page 2.

2016-11-09

1 234 5 6 7...9

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