PD-97895
IRHNM9A7120
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.2)
TECHNOLOGY
R
9
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHNM9A7120
IRHNM9A3120
100 kRads (Si)
300 kRads (Si)
23A
23A
55m
55m
SMD-0.2
METAL LID
Description
Features
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
IR HiRel R9 technology provides superior power MOSFETs
for space applications. These devices have improved
immunity to Single Event Effect (SEE) and have been
characterized for useful performance with Linear Energy
Transfer (LET) up to 90MeV/(mg/cm2). Their combination of
low RDS(on) and faster switching times reduces the power
losses and increases power density in today’s high speed
switching applications such as DC-DC converters and motor
controllers. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, and temperature stability of electrical parameters.
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Value
Parameter
Units
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
23
A
14
92
IDM @TC = 25°C
PD @TC = 25°C
Pulsed Drain Current
W
W/°C
V
Maximum Power Dissipation
54
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
0.43
± 20
392
23
VGS
EAS
IAR
mJ
A
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
5.4
14.6
-55 to + 150
TSTG
°C
g
300 (for 5s)
Weight
0.25 (Typical)
For Footnotes, refer to the page 2.
1
2019-04-12
International Rectifier HiRel Products, Inc.