Datasheet > IRHNKC9A97034

IRHNKC9A97034

更新时间： 2024-11-24 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	553K
描述
Rad hard, -60V, -32A, single, P-channel MOSFET, R9 in a SMD-0.5e Ceramic Lid package - SMD-0.5e (Ceramic Lid), 100 krad(Si) TID, COTS

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IRHNKC9A97034 数据手册

IRHNKC9A97034 (JANSR2N7659U3CE)

Radiation Hardened Power MOSFET

PD-97997B

Surface Mount (SMD-0.5e Ceramic Lid)

-60V, -32A, P-channel, R9 Superjunction Technology

Product Summary

Features

•

Single event effect (SEE) hardened

•

BV_DSS: -60V

I_D: -32A

R_DS(on),max: 45m

Q_Gmax: 48nC

(up to LET of 91.3 MeV·cm²/mg)

•

Low R_DS(on)

Rugged SOA

REF: MIL-PRF-19500/780

Improved Avalanche Energy

Simple drive requirements

Hermetically sealed

Ceramic package

Light weight

Surface mount

ESD rating: Class 2 per MIL-STD-750, Method 1020

Potential Applications

SMD-0.5e (Ceramic Lid)

•

Power distribution

Latching current limiter

Motor drives

DC-DC converter

Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy

Transfer (LET) up to 91.3 MeV·cm²/mg. Their combination of low R_DS(on)and improved SOA will allow for better

performance in applications such as Latching Current Limiters or Solid-State Power Controllers. These devices

retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature

stability of electrical parameters.

Ordering Information

Table 1

Part number

Ordering options

Package

Screening Level

COTS

TID Level

IRHNKC9A97034

JANSR2N7659U3CE

IRHNKC9A93034

JANSF2N7659U3CE

SMD-0.5e (Ceramic Lid)

100 krad(Si)

300 krad(Si)

JANS

COTS

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2023-07-26

12 3 4 5 6 7...14

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与IRHNKC9A97034相关器件

型号	品牌	获取价格	描述	数据表
IRHNKC9A97130	INFINEON	获取价格	Rad hard, -100V, -24A, single, P-channel MOSFET, R9 in a SMD-0.5e Ceramic Lid package - SM
IRHNM53110	INFINEON	获取价格	Power Field-Effect Transistor, 6.9A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me
IRHNM54110	INFINEON	获取价格	Power Field-Effect Transistor, 6.9A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me
IRHNM57110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2)
IRHNM57110SCS	INFINEON	获取价格	Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 100 kra
IRHNM57214SE	INFINEON	获取价格	Power Field-Effect Transistor
IRHNM57214SESCS	INFINEON	获取价格	Rad hard, 250V, 3.7A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 100 kra
IRHNM58110	INFINEON	获取价格	Power Field-Effect Transistor, 6.9A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me
IRHNM593110	INFINEON	获取价格	Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Met
IRHNM597110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2)

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