型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNKC9A93130 | INFINEON |
获取价格 |
Rad hard, -100V, -24A, single, P-channel MOSFET, R9 in a SMD-0.5e Ceramic Lid package - SM | |
IRHNKC9A97034 | INFINEON |
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Rad hard, -60V, -32A, single, P-channel MOSFET, R9 in a SMD-0.5e Ceramic Lid package - SMD | |
IRHNKC9A97130 | INFINEON |
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Rad hard, -100V, -24A, single, P-channel MOSFET, R9 in a SMD-0.5e Ceramic Lid package - SM | |
IRHNM53110 | INFINEON |
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Power Field-Effect Transistor, 6.9A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNM54110 | INFINEON |
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Power Field-Effect Transistor, 6.9A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNM57110 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2) | |
IRHNM57110SCS | INFINEON |
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Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 100 kra | |
IRHNM57214SE | INFINEON |
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Power Field-Effect Transistor | |
IRHNM57214SESCS | INFINEON |
获取价格 |
Rad hard, 250V, 3.7A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 100 kra | |
IRHNM58110 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.9A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me |