Datasheet > IRHNM9A7120SCS

IRHNM9A7120SCS

更新时间： 2024-10-15 14:56:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	373K
描述
Rad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2 package - SMD-0.2, 100 krad(Si) TID, QIRL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHNM9A7120SCS 数据手册

PD-97895

IRHNM9A7120

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.2)

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

IRHNM9A7120

IRHNM9A3120

100 kRads (Si)

300 kRads (Si)

23A

55m

SMD-0.2

METAL LID

Description

Features

 Low RDS(on)

 Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

 Light Weight

 Surface Mount

IR HiRel R9 technology provides superior power MOSFETs

for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been

characterized for useful performance with Linear Energy

Transfer (LET) up to 90MeV/(mg/cm²). Their combination of

low RDS(on) and faster switching times reduces the power

losses and increases power density in today’s high speed

switching applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, and temperature stability of electrical parameters.

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.43

± 20

392

V_GS

E_AS

I_AR

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

5.4

14.6

-55 to + 150

T_STG

°C

300 (for 5s)

Weight

0.25 (Typical)

For Footnotes, refer to the page 2.

2019-04-12

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRHNM9A7120SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHNMC53110	INFINEON	获取价格	Power Field-Effect Transistor, 6.9A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me
IRHNMC57110	INFINEON	获取价格	Power Field-Effect Transistor, 6.9A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me
IRHNMC57110SCS	INFINEON	获取价格	Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 100 kra
IRHNMC57214SE	INFINEON	获取价格	Rad hard, 250V, 3.7A, N-channel MOSFET, R5 in SMD-0.2C package - 100 krad(Si) TID, COTS
IRHNMC57214SESCS	INFINEON	获取价格	Rad hard, 250V, 3.7A, single, N-channel MOSFET, R5 in a SMD-0.2C package - 100 krad(Si) TI
IRHNMC593110	INFINEON	获取价格	Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Met
IRHNMC597110	INFINEON	获取价格	Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Met
IRHNMC9A3024	INFINEON	获取价格	Rad hard, 60V, 25A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 300 kra
IRHNMC9A3120	INFINEON	获取价格	Rad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 300 kr
IRHNMC9A7024	INFINEON	获取价格	Rad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 300 kr

与IRHNM9A7120SCS相关文章

意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

9
联发科推出全球首款3纳米汽车芯片CT-X1，挑战高通SA8295
2024-10-15

13
国家大基金减持三家半导体企业，市场反应各异
2024-10-15

14
晶圆厂易主：Coherent公司2000万英镑出售苹果供应链关键资产
2024-10-08

36

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNM9A7120SCS

IRHNM9A7120SCS 数据手册

与IRHNM9A7120SCS相关器件

与IRHNM9A7120SCS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNM9A7120SCS

IRHNM9A7120SCS 数据手册

与IRHNM9A7120SCS相关器件

与IRHNM9A7120SCS相关文章

您还可以找

您在本页遇到什么问题？