Datasheet > IRHM7064SCS

IRHM7064SCS

更新时间： 2024-11-24 19:46:11

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
8页	268K
描述
Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHM7064SCS 数据手册

T^®

Absolute Maximum Ratings

Parameter

PD - 91564D

IRHM7064

JANSR2N7431

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (T0-254AA)

REF:MIL-PRF-19500/663

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHM7064

IRHM3064

IRHM4064

IRHM8064

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

1000K Rads (Si)

0.021Ω 35*A JANSR2N7431

0.021Ω 35*A JANSF2N7431

0.021Ω 35*A JANSG2N7431

0.021Ω 35*A JANSH2N7431

TO-254AA

International Rectifiers RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Pre-Irradiation

Units

@ V

= 12V, T = 25°C Continuous Drain Current

35*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

284

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

2.5

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical )

Lead Temperature

Weight

For footnotes refer to the last page

*Current is limited by pin diameter

www.irf.com

8/9/01

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRHM7064SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHM7064SCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM7064U	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM7064UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM7130	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM7130D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 14A I(D) \| TO-254VAR
IRHM7130DPBF	INFINEON	获取价格	暂无描述
IRHM7130U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 14A I(D) \| TO-254VAR
IRHM7150	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM7150D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 34A I(D) \| TO-254VAR
IRHM7150DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me

与IRHM7064SCS相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHM7064SCS

IRHM7064SCS 数据手册

与IRHM7064SCS相关器件

与IRHM7064SCS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHM7064SCS

IRHM7064SCS 数据手册

与IRHM7064SCS相关器件

与IRHM7064SCS相关文章

您还可以找

您在本页遇到什么问题？