是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.14 | Is Samacsys: | N |
其他特性: | RADIATION HARDENED | 雪崩能效等级(Eas): | 330 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 9 A |
最大漏极电流 (ID): | 9 A | 最大漏源导通电阻: | 0.49 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | S-MSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 75 W |
最大脉冲漏极电流 (IDM): | 36 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHM7230D | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-254VAR | |
IRHM7230PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHM7230U | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-254VAR | |
IRHM7250 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) | |
IRHM7250D | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254VAR | |
IRHM7250PBF | INFINEON |
获取价格 |
暂无描述 | |
IRHM7250SE | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET | |
IRHM7250SED | INFINEON |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Me | |
IRHM7250SESCS | INFINEON |
获取价格 |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA package - Standard | |
IRHM7250SEU | INFINEON |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Me |