Datasheet > IRH93130

IRH93130

更新时间： 2024-01-17 20:30:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	121K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA)

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IRH93130 数据手册

PD - 90880C

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (T0-204AA)

IRH9130

100V, P-CHANNEL

RADHard HEXFET TECHNOLOGY

™

Product Summary

Part Number Radiation Level RDS(on)

IRH9130

IRH93130

100K Rads (Si)

300K Rads (Si)

0.3Ω

-11A

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

TO-204AA

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-11

= -12V, T = 100°C Continuous Drain Current

-7.0

-44

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.6

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

190

-11

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

V/ns

dv/dt

-10

-55 to 150

^oC

Storage Temperature Range

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

11.5 (Typical )

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

02/18/03

12 3 4 5 6 7 8

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