Datasheet > IRH93230

IRH93230

更新时间： 2024-01-04 12:48:41

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
4页	64K
描述
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package

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IRH93230 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.06	Base Number Matches：	1

IRH93230 数据手册

Provisional Data Sheet No. PD-9.1391

IRH9230

AVALANCHE ENERGY AND dv/dt RATED

HEXFET^®TRANSISTOR

P-CHANNEL

RAD HARD

Product Summary

-200 Volt, 0.8Ω, RAD HARD HEXFET

International Rectifier’s P-Channel RAD HARD technology

HEXFETs demonstrate excellent threshold voltage stability

and breakdown voltage stability at total radiation doses as

high as 10⁵Rads (Si). Underidenticalpre- and post-radiation

test conditions, International Rectifier’s P-Channel RAD

HARD HEXFETs retainidentical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in gate

drive circuitry is required.These devices are also capable of

surviving transient ionization pulses as high as 1 x 10¹²Rads

(Si)/Sec, and return to normal operation within a few

microseconds. Single Event Effect (SEE) testing of

International Rectifier P-Channel RAD HARD HEXFETs has

demonstrated virtual immunity to SEE failure. Since the P-

Channel RAD HARD process utilizes International Rectifier’s

Part Number

IRH9230

BV_DSS

-200V

R_DS(on)

I_D

0.8Ω

-6.5A

Features:

Radiation Hardened up to 1 x 10⁵Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

patented HEXFET technology, the user can expect the n Identical Pre- and Post-Electrical Test Conditions

highest quality and reliability in the industry.

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

P-Channel RAD HARD HEXFET transistors also feature all

of the well-established advantages of MOSFETs, such as

voltage control,very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

They are well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio amplifiers

and high-energy pulse circuits in space and weapons

environments.

Hermetically Sealed

Pre-Radiation

Absolute Maximum Ratings

Parameter

Continuous Drain Current

IRH9230

-6.5

Units

@ V

= -12V, T = 25°C

= -12V, T = 100°C Continuous Drain Current

-4.1

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

-26

@ T = 25°C

W/K ꢀ

0.2

±20

Single Pulse Avalanche Energy

Avalanche Current

330

-6.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

7.5

dv/dt

-5.0

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

LeadTemperature

Weight

300 (0.063 in. (1 .6mm) from case for 10s)

11.5 (typical)

Notes: See page 4

12 3 4

中文翻译

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与IRH93230相关器件

型号	品牌	获取价格	描述	数据表
IRH93250	ETC	获取价格	-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package
IRHA7260	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 43A I(D) \| SMT
IRHA8260	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 43A I(D) \| SMT
IRHC7110	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| CHIP
IRHC7130	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRHC7150	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide
IRHC7230	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IRHC7450	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| CHIP
IRHD320CW40	INFINEON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 410A, 400V V(RRM), Silicon, TO-244AB, LEAD FREE, TO-2
IRHD320CW40PBF	INFINEON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 321A, Silicon, TO-244, TO-244, 2 PIN

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