IRHE4230PBF

更新时间： 2024-01-06 13:58:10

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
12页	271K
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数据手册

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IRHE4230PBF 数据手册

PD - 90713E

IRHE7230

JANSR2N7262U

200V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-18)

REF: MIL-PRF-19500/601

RAD-Hard^™HEXFET^®MOSFET

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHE7230

IRHE3230

IRHE4230

IRHE8230

100K Rads (Si)

0.35Ω

5.5A JANSR2N7262U

5.5A JANSF2N7262U

5.5A JANSG2N7262U

5.5A JANSH2N7262U

300K Rads (Si) 0.35Ω

600K Rads (Si) 0.35Ω

1000K Rads (Si) 0.35Ω

LCC - 18

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

5.5

= 12V, T = 100°C Continuous Drain Current

3.5

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.2

Gate-to-Source Voltage

±20

240

—

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

—

V/ns

dv/dt

5.0

-55 to 150

Storage Temperature Range

^oC

STG

Pckg. Mounting Surface Temp.

Weight

300 ( for 5s)

0.42 (Typical)

For footnotes refer to the last page

www.irf.com

02/01/01

12 3 4 5 6 7...12

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