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IRHE54Z30 PDF预览

IRHE54Z30

更新时间: 2024-02-23 04:05:25
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 133K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)

IRHE54Z30 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CHIP CARRIER, R-CQCC-N15Reach Compliance Code:compliant
风险等级:5.7雪崩能效等级(Eas):156 mJ
外壳连接:SOURCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):12 A
最大漏源导通电阻:0.07 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CQCC-N15元件数量:1
端子数量:15工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):48 A表面贴装:YES
端子形式:NO LEAD端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHE54Z30 数据手册

 浏览型号IRHE54Z30的Datasheet PDF文件第2页浏览型号IRHE54Z30的Datasheet PDF文件第3页浏览型号IRHE54Z30的Datasheet PDF文件第4页浏览型号IRHE54Z30的Datasheet PDF文件第5页浏览型号IRHE54Z30的Datasheet PDF文件第6页浏览型号IRHE54Z30的Datasheet PDF文件第7页 
                                                                             
PD - 93863E  
IRHE57Z30  
JANSR2N7494U5  
30V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (LCC-18)  
REF: MIL5-PRF-19500/700  
TECHNOLOGY  
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHE57Z30  
IRHE53Z30  
IRHE54Z30  
100K Rads (Si) 0.07Ω  
300K Rads (Si) 0.07Ω  
500K Rads (Si) 0.07Ω  
12A* JANSR2N7494U5  
12A* JANSF2N7494U5  
12A* JANSG2N7494U5  
12A* JANSH2N7494U5  
IRHE58Z30 1000K Rads (Si) 0.07Ω  
LCC-18  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Surface Mount  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
= 12V, T = 25°C Continuous Drain Current  
12*  
8.0  
D
D
GS  
GS  
C
A
I
@ V  
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
48  
DM  
@ T = 25°C  
P
D
Max. Power Dissipation  
25  
W
W/°C  
V
C
Linear Derating Factor  
0.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
156  
12  
GS  
E
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
2.5  
mJ  
V/ns  
AR  
dv/dt  
2.3  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
0.42 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
04/26/06  

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