是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-CQCC-N15 | Reach Compliance Code: | compliant |
风险等级: | 5.7 | 雪崩能效等级(Eas): | 156 mJ |
外壳连接: | SOURCE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.07 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CQCC-N15 | 元件数量: | 1 |
端子数量: | 15 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 48 A | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHE54Z30PBF | INFINEON |
获取价格 |
暂无描述 | |
IRHE57034 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
IRHE57133SE | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) | |
IRHE57133SEPBF | INFINEON |
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暂无描述 | |
IRHE57Z30 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
IRHE57Z30SCS | INFINEON |
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Power Field-Effect Transistor, 12A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHE57Z30SCSPBF | INFINEON |
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Power Field-Effect Transistor, 12A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHE58034 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
IRHE58Z30 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
IRHE67230SCS | INFINEON |
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Rad hard, 200V, 8A, single, N-channel MOSFET, R6 in an 18-pin LCC package - 18-pin LCC, 10 |