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IRFU120 PDF预览

IRFU120

更新时间: 2024-01-29 23:16:49
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 1702K
描述
IRFR120

IRFU120 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-251AA
包装说明:LEAD FREE, PLASTIC, IPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.27Is Samacsys:N
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):18 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):8.7 A
最大漏极电流 (ID):8.7 A最大漏源导通电阻:0.19 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):35 W最大脉冲漏极电流 (IDM):35 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFU120 数据手册

 浏览型号IRFU120的Datasheet PDF文件第1页浏览型号IRFU120的Datasheet PDF文件第2页浏览型号IRFU120的Datasheet PDF文件第4页浏览型号IRFU120的Datasheet PDF文件第5页浏览型号IRFU120的Datasheet PDF文件第6页浏览型号IRFU120的Datasheet PDF文件第7页 
IRFR120, IRFU120, SiHFR120, SiHFU120  
Vishay Siliconix  
SPECIFICATIONS TJ = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Drain-Source Body Diode Characteristics  
MOSFET symbol  
showing the  
integral reverse  
p - n junction diode  
D
Continuous Source-Drain Diode Current  
Pulsed Diode Forward Currenta  
IS  
-
-
-
-
7.7  
31  
A
G
ISM  
S
Body Diode Voltage  
VSD  
trr  
TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb  
-
-
-
-
2.5  
260  
1.3  
V
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Forward Turn-On Time  
130  
0.65  
ns  
µC  
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µsb  
Qrr  
ton  
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Pulse width 300 µs; duty cycle 2 %.  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
Fig. 3 - Typical Transfer Characteristics  
Fig. 1 - Typical Output Characteristics, TC = 25 °C  
Fig. 4 - Normalized On-Resistance vs. Temperature  
Fig. 2 - Typical Output Characteristics, TC = 150 °C  
Document Number: 91266  
S-Pending-Rev. A, 21-Jul-08  
www.vishay.com  
3

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