IRFR9024TR

更新时间： 2024-09-13 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关
页数	文件大小	规格书
8页	1973K
描述
Power MOSFET

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数据手册
替代型号

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IRFR9024TR 数据手册

IRFR9024, IRFU9024, SiHFR9024, SiHFU9024

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Dynamic dV/dt Rating

- 60

• Repetitive Avalanche Rated

Available

R_DS(on)(Ω)

V_GS= - 10 V

0.28

• Surface Mount (IRFR9024/SiHFR9024)

RoHS*

COMPLIANT

Q_g(Max.) (nC)

Q_gs(nC)

• Straight Lead (IRFU9024/SiHFU9024)

5.4

• Available in Tape and Reel

Q_gd(nC)

• P-Channel

Configuration

Single

• Fast Switching

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effictiveness.

DPAK

(TO-252)

IPAK

(TO-251)

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surcace mount applications.

P-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9024PbF

SiHFR9024-E3

IRFR9024

DPAK (TO-252)

IRFR9024TRPbF^a

SiHFR9024T-E3^a

IRFR9024TR^a

DPAK (TO-252)

IRFR9024TRLPbF^a

SiHFR9024TL-E3^a

IRFR9024TRL^a

SiHFR9024TL^a

DPAK (TO-252)

IRFR9024TRRPbF^a

SiHFR9024TR-E3^a

IPAK (TO-251)

IRFU9024PbF

SiHFU9024-E3

IRFU9024

Lead (Pb)-free

SnPb

SiHFR9024

SiHFR9024T^a

SiHFU9024

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

- 60

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

- 8.8

- 5.6

- 35

Continuous Drain Current

_GSat - 10 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.33

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

0.020

300

E_AS

I_AR

- 8.8

5.0

Repetitive Avalanche Energy^a

E_AR

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

2.5

dV/dt

- 4.5

- 55 to + 150

260^d

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 4.5 mH, R_G= 25 Ω, I_AS= - 8.8 A (see fig. 12).

c. I_SD≤ - 11 A, dI/dt ≤ 140 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91278

S-81377-Rev. A, 30-Jun-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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IRFR9024TR 替代型号

型号	品牌	替代类型	描述	数据表
IRFR9024TRRPBF	VISHAY	完全替代	Power MOSFET
IRFR9024TRPBF	VISHAY	完全替代	Power MOSFET
IRFR9024TRLPBF	VISHAY	完全替代	Power MOSFET

与IRFR9024TR相关器件

型号	品牌	获取价格	描述	数据表
IRFR9024TRA	KERSEMI	获取价格	Power MOSFET
IRFR9024TRL	KERSEMI	获取价格	Power MOSFET
IRFR9024TRL	VISHAY	获取价格	Power MOSFET
IRFR9024TRLA	KERSEMI	获取价格	Power MOSFET
IRFR9024TRLBF	KERSEMI	获取价格	Power MOSFET
IRFR9024TRLPBF	VISHAY	获取价格	Power MOSFET
IRFR9024TRLPBFA	KERSEMI	获取价格	Power MOSFET
IRFR9024TRPBF	VISHAY	获取价格	Power MOSFET
IRFR9024TRPBF	KERSEMI	获取价格	Power MOSFET
IRFR9024TRPBFA	KERSEMI	获取价格	Power MOSFET

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