IRFR3711ZPBF

更新时间： 2024-02-25 01:27:06

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	264K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFR3711ZPBF 数据手册

IRFR/U3711ZPbF

Power MOSFET Selection for Non-Isolated DC/DC Converters

Synchronous FET

Control FET

The power loss equation for Q2 is approximated

by;

Special attention has been given to the power losses

in the switching elements of the circuit - Q1 and Q2.

Power losses in the high side switch Q1, also called

the Control FET, are impacted by the R_ds(on)of the

MOSFET, but these conduction losses are only about

one half of the total losses.

P = P

+ P + P^*

loss

conduction

drive

output

P = I_rms²× R_ds(on)

loss ( )

Power losses in the control switch Q1 are given

by;

+ Q × V × f

(

)

⎛

⎜

Q_oss

⎞

⎠

P_loss= P_conduction+ P_switching+ P_drive+ P_output

×V × f + Q × V × f

(

)

⎝ 2

This can be expanded and approximated by;

*dissipated primarily in Q1.

= I ²× R_{ds(on )}

(

)

loss

rms

For the synchronous MOSFET Q2, R_ds(on)is an im-

portant characteristic; however, once again the im-

portance of gate charge must not be overlooked since

it impacts three critical areas. Under light load the

MOSFET must still be turned on and off by the con-

trol IC so the gate drive losses become much more

significant. Secondly, the output charge Q_ossand re-

verse recovery charge Q_rrboth generate losses that

are transfered to Q1 and increase the dissipation in

that device. Thirdly, gate charge will impact the

MOSFETs’ susceptibility to Cdv/dt turn on.

⎛

Q_gd

i_g

⎞

Q_gs2

i_g

⎞

⎟

⎜

⎟

⎜

+ I ×

× V × f + I ×

× V × f

⎝

⎠

⎝

⎠

+ Q × V × f

(

)

⎛ Q_oss

⎞

⎠

×V × f

⎝

This simplified loss equation includes the terms Q_gs2

The drain of Q2 is connected to the switching node

of the converter and therefore sees transitions be-

tween ground and V_in. As Q1 turns on and off there is

a rate of change of drain voltage dV/dt which is ca-

pacitively coupled to the gate of Q2 and can induce

a voltage spike on the gate that is sufficient to turn

the MOSFET on, resulting in shoot-through current .

The ratio of Q_gd/Q_gs1must be minimized to reduce the

potential for Cdv/dt turn on.

and Q_osswhich are new to Power MOSFETdata sheets.

Q_gs2is a sub element of traditional gate-source

charge that is included in all MOSFET data sheets.

The importance of splitting this gate-source charge

into two sub elements, Q_gs1and Q_gs2, can be seen from

Fig 16.

Q_gs2indicates the charge that must be supplied by

the gate driver between the time that the threshold

voltage has been reached and the time the drain cur-

rent rises to I_dmaxat which time the drain voltage be-

gins to change. Minimizing Q_gs2is a critical factor in

reducing switching losses in Q1.

Q_ossis the charge that must be supplied to the out-

put capacitance of the MOSFET during every switch-

ing cycle. Figure A shows how Q_ossis formed by the

parallel combination of the voltage dependant (non-

linear) capacitances C_dsand C_dgwhen multiplied by

the power supply input buss voltage.

Figure A: Q_ossCharacteristic

www.irf.com

1...5 6 789 10 11 12

中文翻译

下载PDF

IRFR3711ZPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFR3711ZTRPBF	INFINEON	类似代替	Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me

与IRFR3711ZPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR3711ZTR	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me
IRFR3711ZTRL	INFINEON	获取价格	High Frequency Synchronous Buck Converters for Computer Processor Power
IRFR3711ZTRLPBF	INFINEON	获取价格	暂无描述
IRFR3711ZTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me
IRFR3711ZTRR	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me
IRFR3806	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capabil
IRFR3806PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR3806TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时
IRFR3806TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
IRFR3806TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me

与IRFR3711ZPBF相关文章

解读BAV99LT1数据手册：产品特性、电气参数及替换型号推荐
2024-06-18

1
资料解析：P82B96TD引脚图说明、电气参数
2024-06-18

1
ATA6621N数据手册解读：产品特性、引脚图信息、电气参数
2024-06-18

4
一文AO3400引脚图、参数、产品特性
2024-06-18

1

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR3711ZPBF

IRFR3711ZPBF 数据手册

IRFR3711ZPBF 替代型号

与IRFR3711ZPBF相关器件

与IRFR3711ZPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR3711ZPBF

IRFR3711ZPBF 数据手册

IRFR3711ZPBF 替代型号

与IRFR3711ZPBF相关器件

与IRFR3711ZPBF相关文章

您还可以找

您在本页遇到什么问题？