IRFR3711ZPBF

更新时间： 2024-01-25 22:34:48

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	264K
描述
HEXFET Power MOSFET

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数据手册

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IRFR3711ZPBF 数据手册

IRFR/U3711ZPbF

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

P.W.

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

Vds

Vgs

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 16. Gate Charge Waveform

www.irf.com

1...4 5 678 9 10...12

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