5秒后页面跳转
IRFI620G PDF预览

IRFI620G

更新时间: 2024-09-15 22:24:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 176K
描述
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.1A)

IRFI620G 数据手册

 浏览型号IRFI620G的Datasheet PDF文件第2页浏览型号IRFI620G的Datasheet PDF文件第3页浏览型号IRFI620G的Datasheet PDF文件第4页浏览型号IRFI620G的Datasheet PDF文件第5页浏览型号IRFI620G的Datasheet PDF文件第6页 

与IRFI620G相关器件

型号 品牌 获取价格 描述 数据表
IRFI620G-002PBF INFINEON

获取价格

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRFI620G-004PBF INFINEON

获取价格

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRFI620G-005 INFINEON

获取价格

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRFI620G-005PBF INFINEON

获取价格

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRFI620G-006 INFINEON

获取价格

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRFI620G-006PBF INFINEON

获取价格

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRFI620G-009 INFINEON

获取价格

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRFI620G-009PBF INFINEON

获取价格

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRFI620G-010 INFINEON

获取价格

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRFI620G-010PBF INFINEON

获取价格

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met