5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| IRFI620G-006 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRFI620G-006PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRFI620G-009 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRFI620G-009PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRFI620G-010 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRFI620G-010PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRFI620G-011PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRFI620G-012PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRFI620G-013 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRFI620G-013PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |
|
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
贸泽上架Tallysman TW5386智能GNSS天线
SL74HC10N：高性能三输入与非门解析
AIC1781A 电池充电控制器深度解析
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
