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IRFI620G-013 PDF预览

IRFI620G-013

更新时间: 2024-09-17 07:40:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 34K
描述
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRFI620G-013 数据手册

  

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