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IRF7424TRPBF PDF预览

IRF7424TRPBF

更新时间: 2024-02-29 10:44:37
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
9页 127K
描述
HEXFETPower MOSFET

IRF7424TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.11配置:Single
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):11 A
最大漏极电流 (ID):11 A最大漏源导通电阻:0.0135 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
湿度敏感等级:1元件数量:1
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2.5 W
子类别:Other Transistors表面贴装:YES
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IRF7424TRPBF 数据手册

 浏览型号IRF7424TRPBF的Datasheet PDF文件第1页浏览型号IRF7424TRPBF的Datasheet PDF文件第3页浏览型号IRF7424TRPBF的Datasheet PDF文件第4页浏览型号IRF7424TRPBF的Datasheet PDF文件第5页浏览型号IRF7424TRPBF的Datasheet PDF文件第6页浏览型号IRF7424TRPBF的Datasheet PDF文件第7页 
IRF7424PbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
-30 ––– –––  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
VGS = 0V, ID = -250µA  
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient  
––– 0.019 ––– V/°C Reference to 25°C, ID = -1mA  
––– ––– 13.5  
––– ––– 22  
VGS = -10V, ID = -11A ‚  
VGS = -4.5V, ID = -8.8A ‚  
VDS = VGS, ID = -250µA  
VDS = -10V, ID = -11A  
VDS = -24V, VGS = 0V  
VDS = -24V, VGS = 0V, TJ = 70°C  
VGS = -20V  
RDS(on)  
Static Drain-to-Source On-Resistance  
mΩ  
VGS(th)  
gfs  
Gate Threshold Voltage  
-1.0 ––– -2.5  
17 ––– –––  
––– ––– -15  
––– ––– -25  
––– ––– -100  
––– ––– 100  
––– 75 110  
V
S
Forward Transconductance  
IDSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
IGSS  
VGS = 20V  
Qg  
ID = -11A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
––– 14  
––– 12  
21  
18  
nC VDS = -15V  
VGS = -10V  
––– 15 –––  
––– 23 –––  
––– 150 –––  
––– 76 –––  
––– 4030 –––  
––– 580 –––  
––– 410 –––  
VDD = -15V ‚  
ID = -1.0A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 6.0Ω  
VGS = -10V  
Ciss  
Coss  
Crss  
Input Capacitance  
VGS = 0V  
Output Capacitance  
pF  
VDS = -25V  
ƒ = 1.0kHz  
Reverse Transfer Capacitance  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
D
IS  
MOSFET symbol  
showing the  
–––  
–––  
-2.5  
-47  
–––  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
–––  
S
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
––– ––– -1.2  
V
TJ = 25°C, IS = -2.5A, VGS = 0V ‚  
––– 40  
––– 47  
60  
71  
ns  
TJ = 25°C, IF = -2.5A  
Qrr  
nC di/dt = -100A/µs ‚  
Notes:  
 Repetitive rating; pulse width limited by  
ƒ Surface mounted on 1 in square Cu board  
max. junction temperature.  
‚ Pulse width 400µs; duty cycle 2%.  
2
www.irf.com  

IRF7424TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF7424TR INFINEON

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