Datasheet > IRF5N5210SCX

IRF5N5210SCX

更新时间： 2024-02-23 22:48:30

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	171K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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IRF5N5210SCX 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.6	配置：	Single
最大漏极电流 (Abs) (ID)：	31 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	125 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

IRF5N5210SCX 数据手册

PD-94154A

HEXFET^®POWER MOSFET

SURFACE MOUNT (SMD-1)

IRF5N5210

100V, P-CHANNEL

Product Summary

Part Number

RDS(on)

DSS

IRF5N5210

-100V

0.060Ω -31A

Fifth Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievethelowestpossibleon-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

providesthedesignerwithanextremelyefficientdevice

for use in a wide variety of applications.

SMD-1

Features:

Low RDS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

These devices are well-suited for applications such

as switching power supplies, motor controls, inverters,

choppers, audio amplifiers and high-energy pulse

circuits.

Light Weight

Absolute Maximum Ratings

Parameter

Units

@ V

= -10V, T = 25°C Continuous Drain Current

-31

-19

= -10V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

-124

125

@ T = 25°C

Max. Power Dissipation

W/°C

Linear Derating Factor

1.0

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

340

-19

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

12.5

-4.0

V/ns

dv/dt

-55 to 150

Storage Temperature Range

°C

STG

Package Mounting Surface Temperature

Weight

300 (for 5 s)

2.6 (Typical)

For footnotes refer to the last page

www.irf.com

09/23/08

12 3 4 5 6 7

中文翻译

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