Datasheet > IRF5N60

IRF5N60

更新时间： 2024-01-01 18:26:36

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描述
POWER MOSFET

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IRF5N60 数据手册

IRF5N60

POWER MOSFET

GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

'ꢀ Robust High Voltage Termination

'ꢀ Avalanche Energy Specified

'ꢀ Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

'ꢀ Diode is Characterized for Use in Bridge Circuits

'ꢀ I_DSSSpecified at Elevated Temperature

PIN CONFIGURATION

SYMBOL

TO-220FP

Front View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current ꢀ Continuous

ꢀ Pulsed

Symbol

I_D

Value

5.0

Unit

I_DM

Gate-to-Source Voltage ꢀ Continue

ꢀ Non-repetitive

V_GS

V_GSM

Total Power Dissipation

P_D

Derate above 25R

0.28

W/R

Operating and Storage Temperature Range

T_J, T_STG

E_AS

-55 to 150

245

Single Pulse Drain-to-Source Avalanche Energy ꢀ T_J= 25R

(V_DD= 100V, V_GS= 10V, I_L= 7A, L = 10mH, R_G= 25ꢀ)

Thermal Resistance ꢀ Junction to Case

1.0

62.5

260

R/W

ꢀ Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

(1) Pulse Width and frequency is limited by TJ(max) and thermal response

T_L

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