PD - 94149A
IRF3205S
IRF3205L
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
VDSS = 55V
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 8.0mΩ
G
ID = 110Aꢀ
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETsarewellknownfor, providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capabilityandthelowestpossibleon-resistanceinanyexistingsurface
mount package. The D2Pak is suitable for high current applications
because of its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
D2Pak
IRF3205S
TO-262
IRF3205L
The through-hole version (IRF3205L) is available for low-profile
applications.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
110 ꢀ
80
A
390
PD @TC = 25°C
Power Dissipation
200
W
W/°C
V
Linear Derating Factor
1.3
VGS
IAR
Gate-to-Source Voltage
20
Avalanche Current
62
20
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.75
Units
°C/W
RθJC
RθJA
Junction-to-Ambient (PCB mounted, steady-state)*
–––
40
www.irf.com
1
09/06/02