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IRF3205S_02 PDF预览

IRF3205S_02

更新时间: 2024-11-01 04:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 610K
描述
HEXFET Power MOSFET

IRF3205S_02 数据手册

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PD - 94149A  
IRF3205S  
IRF3205L  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
D
VDSS = 55V  
l 175°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
RDS(on) = 8.0mΩ  
G
ID = 110Aꢀ  
S
Description  
Advanced HEXFET® Power MOSFETs from International Rectifier  
utilize advanced processing techniques to achieve extremely low on-  
resistance per silicon area. This benefit, combined with the fast  
switching speed and ruggedized device design that HEXFET power  
MOSFETsarewellknownfor, providesthedesignerwithanextremely  
efficient and reliable device for use in a wide variety of applications.  
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the highest power  
capabilityandthelowestpossibleon-resistanceinanyexistingsurface  
mount package. The D2Pak is suitable for high current applications  
because of its low internal connection resistance and can dissipate up  
to 2.0W in a typical surface mount application.  
D2Pak  
IRF3205S  
TO-262  
IRF3205L  
The through-hole version (IRF3205L) is available for low-profile  
applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
110 ꢀ  
80  
A
390  
PD @TC = 25°C  
Power Dissipation  
200  
W
W/°C  
V
Linear Derating Factor  
1.3  
VGS  
IAR  
Gate-to-Source Voltage  
20  
Avalanche Current  
62  
20  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.75  
Units  
°C/W  
RθJC  
RθJA  
Junction-to-Ambient (PCB mounted, steady-state)*  
–––  
40  
www.irf.com  
1
09/06/02  

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