Datasheet > IR38ESR12M

IR38ESR12M

更新时间： 2024-09-17 04:56:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	58K
描述
Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element

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IR38ESR12M 数据手册

Bulletin I0403J

IR38ESR..M SERIES

PHASE CONTROL THYRISTORS

Junction Size:

V_RRMClass:

38 mm Diameter

800 to 1800 V

Passivation Process:

Diffused Junction

Reference IR Packaged Part: ST730C..L Series

Major Ratings and Characteristics

Parameters

Units

Test Conditions

V_TM

Maximum On-state Voltage

1.62 V

T_J= 125°C, I_T= 2000 A

V_RRMReverse Breakdown Voltage Range

800 to 1800 V T_J= 125°C, I_RRM= 80 mA

I_GT

V_GT

I_H

Max. Required DC Gate Current to Trigger

Max. Required DC Gate Voltage to Trigger

Maximum Holding Current

200 mA

3.0 V

T_J=25°C

600 mA

1000 mA

T_J=25°C,anodesupply12Vresistiveload

I_L

Typical Latching Current

Mechanical Characteristics

Nominal Back Metal Composition

Nominal Front Metal Composition

Chip Dimensions

Al - Ni - Au (100KA - 7KA - 4KA)

Moly disc

38 mm diameter (see drawing)

RecommendedStorageEnvironment

Storage in original container, in dessicated

nitrogen, withnocontamination

Document Number: 93901

www.vishay.com

12 3

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