Datasheet > IR390LM12CS05CBPBF

IR390LM12CS05CBPBF

更新时间： 2024-11-24 19:18:11

品牌	Logo	应用领域
英飞凌 - INFINEON		快速恢复二极管
页数	文件大小	规格书
3页	123K
描述
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER

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IR390LM12CS05CBPBF 数据手册

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Bulletin I0113J 05/00

IR390LM..CS05CB SERIES

FAST RECOVERY DIODES

Junction Size:

Wafer Size:

Rectangular 390 x 270 mils

V_RRMClass:

1000 to 1200 V

PassivationProcess:

Glassivated MOAT

Reference IR Packaged Part: 80EPF Series

Major Ratings and Characteristics

Parameters

Units

TestConditions

V_FM

MaximumForwardVoltage

1300mV

T_J= 25°C, I_F= 80 A

V_RRMReverse BreakdownVoltageRange

1000 to1200V T_J= 25°C, I_RRM= 100 µA

(1)

(1) Nitrogen flow on die edge.

Mechanical Characteristics

NominalBackMetalComposition, Thickness

Cr - Ni - Ag (1 KA - 4 KA - 6 KA)

100% Al, (20 µm)

NominalFrontMetalComposition, Thickness

ChipDimensions

390 x 270 mils (9.91x6.86 mm) - see drawing

100 mm, with std. < 110 > flat

260 µm

WaferDiameter

WaferThickness

MaximumWidthofSawingLine

Reject Ink Dot Size

45 µm

0.25mmdiameterminimum

Seedrawing

InkDotLocation

RecommendedStorageEnvironment

Storageinoriginalcontainer, indessicated

nitrogen,withnocontamination

www.irf.com

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